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Lifetime of pMOSFETs is limited by negative bias temperature instability (NBTI). NBTI causes the degradation of drive current and threshold voltage of p-MOSFETs. This paper presents the comparison of DC and pulse train analysis on sub micrometer pMOSFETs lifetime prediction using on-the-fly (OTF) method. The SiO2 conventional PMOS transistor having effective oxide thickness (EOT) between 1.8nm and...