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We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors (E2LIGBTs), which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 A/cm2 simultaneously with a high breakdown voltage of 738V. For the first time, E2LIGBTs have exceeded the counterpart lateral DMOS both in switching speed and in on-resistance. The...
Advances in semiconductor technology have brought the performance of power transistors near the physical limit. Substantial performance enhancement of power switches will therefore require either new materials, or new devices that obey fundamentally different limits. One of the new power devices that might offer an alternative to the transistor is the microelectromechanical (MEMS) switch. Here we...
Here is presented the development of the new BCD800 platform which conjugates 3.3V CMOS logic, 5/25/30V power devices and a 800V nLDMOS in a 0.35µm technology node. LV components can be placed into a floating pocket which can be referred up to 650V, furthermore this process features an innovative lateral junction isolation module obtained by a boron-doped poly-filled deep trench with great advantages...
This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with...
This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices,...
1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel diode in applications requiring reverse commutation. Device characteristics and experimental results are given for both traditional half-bridge and cascode...
The clamped inductive turn-off failure of NPT-IGBTs is investigated under overloading events. First, their signatures are determined. Second, physical TCAD simulations are carried out considering, for the first time, the current mismatch among the cells from the chip core, gate runner and edge termination areas. As a result, a secondary breakdown at the IGBT peripheral cells at the edge of the gate...
The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer,...
For the first time, experiments and simulations for testing the influence of dynamic switching on the robustness of power devices against cosmic radiation are presented. Irradiation experiments of switching high power modules are performed, using pulsed proton or neutron beams. Thereby, the switching frequency of the power modules is synchronized to the extraction frequency of particle beam pulses...
In the fast recovery operation of Free-wheeling Diode (FWD), to reduce voltage surge “snap-off”, we propose the Relaxed Field of Cathode (RFC)-planar anode diode in the range of 600 V to 1700 V. RFC effect is described by the parallel connection of pin diode and pnp transistor in as a single chip solution. Its structure is realized by our thin wafer process technology utilizing the backside lithography...
Ultrahigh-voltage 4H-SiC PiN diodes with improved junction termination extension (JTE) structures have been investigated. Breakdown characteristics of 4H-SiC PiN diodes with conventional single-zone JTE was shown to be severely affected by the charge near the SiO2/SiC interface from experiment and device simulation. Taking the effect of the interface charge into account, and by using “Space-Modulated”...
Simulation results show how cathode-side filaments may trigger a thermal runaway at the end of a reverse-recovery period of diodes turned off with extremely high current rates. The mechanism is not essentially affected by the edge termination if an appropriate design is chosen. While multiple avalanche-induced filaments may appear during the reverse-recovery period, at the end of the turn-off phase...
In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thyristor (GCT) under inductive switching conditions. The simulations are validated by extensive experimental measurements. To the authors' knowledge such a complex simulation domain has not been used so far. This method allows the in depth study of large area devices such as GCTs, Gate Turn Off Thyristors...
The purpose of the research described in this paper is to achieve freewheeling diodes (FWDs) with low loss and low reverse recovery surge voltage (Vdsurge). This paper discusses the relationship between electron and hole traps and the electrical properties of FWDs. Samples with controlled conditions of electron and hole traps were fabricated by He irradiation and annealing. The trap conditions were...
A planar multiple floating field-limiting ring structure, designed for above 600V blocking capability, is analyzed in this work. We have proven by simulation and experiment that adding a well designed buffer layer in the epi-substrate region counteracts on the drop in electric field which is due to the space charge limited current and as such the buffer enhances the robustness towards reverse voltage...
A novel high voltage start-up current source to provide start-up current for integrated circuits in a switched mode power supply (SMPS) is presented. The current source contains a VDMOS transistor to sustain high voltage. The gate of the VDMOS transistor is biased at a certain voltage by a floating p-island, to provide start-up current. A NMOS transistor is used to turn on and off the current source...
GaN based bidirectional Super Heterojunction Field Effect Transistors (BiSHFETs) using the polarization junction (PJ) concept are demonstrated for the first time. The fabricated BiSHFETs are arrayed on an insulator substrate of Sapphire and measured isolation voltage between the devices is more than 2 kV. Measured on-resistances of the fabricated BiSHFETs with MES and PN gate structures are 24 Ωmm...
Switching behavior of a 4H-SiC IGBT is discussed considering the punch-through effect of the base layer. The switching behavior is investigated with a mixed-mode simulation of a 2D-numerical device simulator, where extremely abrupt switching characteristics are observed at voltage ratings of 6.5kV and 13kV. The origin is explained by the carrier dynamics under the punch-through condition. As a proof...
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