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A planar multiple floating field-limiting ring structure, designed for above 600V blocking capability, is analyzed in this work. We have proven by simulation and experiment that adding a well designed buffer layer in the epi-substrate region counteracts on the drop in electric field which is due to the space charge limited current and as such the buffer enhances the robustness towards reverse voltage...
This paper for the first time reports on a novel “local” charge balanced trench-based super junction transistor. The local charge balance is achieved by selectively growing thin highly-doped n-type and p-type layers in a deep trench structure. The final charge-balanced trench structure is finished with an oxide-sealed airgap. Devices rated at 10A with Vbd=730V and a Ron=23 mΩ.cm2 are demonstrated.
This paper exploits for the first time the capacitive behaviour of Super Junction (SJ) Trench Power MOSFETs as a characterization method to determine their Charge Balance (CB). Differently from blocking voltage methods, the capacitive method allows the CB extraction in 800 V SJ devices by using low voltage systems (<;30 V) to extract the drain-source capacitance (Cds) in function of the drain-source...
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