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The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer,...
A 300-V TMBS® (Trench MOS Barrier Schottky) rectifier with novel active-cell and termination design is first proposed and demonstrated. The device features a combination of p-transparent anode and Schottky contact, considerably reducing on-state voltage and ensuring a high degree of performance uniformity. A floating p-layer is used in termination region under a trench area to significantly enhance...
In order to achieve a high breakdown voltage (BV) and to realize self-isolation in high-voltage ICs (HVICs), a novel high-voltage n-channel lateral double-diffused MOS (LDMOS) with a buried n-island layer (BNIL) placed at the interface between a p-type silicon-on-insulator (SOI) layer and a buried-oxide (BOX) layer (BNIL SOI) is proposed. Its breakdown mechanism is investigated theoretically and experimentally...
An IGBT with a novel reverse conduction structure is presented and first demonstrated by numerical simulations. As opposed to the standard anti-parallel diode existent in power MOSFETs and conventional reverse conducting IGBTs, here we propose an anti-parallel reverse-conducting thyristor with a very low break-over voltage. The structure includes a narrow-base npn BJT to realise an embedded thyristor...
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