The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Here is presented the development of the new BCD800 platform which conjugates 3.3V CMOS logic, 5/25/30V power devices and a 800V nLDMOS in a 0.35µm technology node. LV components can be placed into a floating pocket which can be referred up to 650V, furthermore this process features an innovative lateral junction isolation module obtained by a boron-doped poly-filled deep trench with great advantages...
In this paper two different 100 V P-channel MOS structures on SOI 0.35 mum BCD technology have been compared. The higher drain doping for the drain extension PMOS with respect to the PDMOS is key to achieve not only good specific on-resistance but also robustness at high temperature reverse bias (HTRB) reliability test.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.