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A process and experimental doping profiles for thermal Atomic Layer Deposition of boron using an AlxOy host oxide are described. Simulations for the thermal ALD of elemental phosphorus and its use are discussed for an efficient oxide doping processes. The use of recoil knock-in is illustrated by simulation. A brief summary of conformal doping approaches is included.
In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a...
In this paper, thin film diamond resonators on Si wafer for high sensitivity force sensing have been developed. Patterned diamond structures have been formed on Ir/YSZ/Si substrate. The completed diamond resonator of cantilever shows a resonance frequency of 51.0 kHz with a quality factor of 14911. The both clamped resonator shows the force sensitivity of 3.36×10−13 N/Hz0.5 at 229.3 kHz with 23500...
Backside grinding is the most commonly used technique in silicon wafer thinning. The grinding damage may cause degradation of mechanical property and induce residual stress. In this paper, bugle test is proposed to apply to ground wafer. Before the experimental work starts, the theoretical model needs to be built. A numerical model is also adopted to verify the applicability of the theoretical model,...
This paper reports our recent progresses on silicon growth technology-based micro/nanoscale three-dimensional (3D) needle-electrode array devices, for use in electrophysiological recordings of neurons/cells within the brain.
We report that the emission wavelength of superlattice prepared by dense packing of colloidal PbS quantum dots (QDs) became longer by replacing the ligands with shorter ones. The dense packing was achieved by the aid of pyramidal hole array prepared on Si substrate using facet selective etching. Emission energy shift was accompanied with the increase of emission lifetime. These emission properties...
(100) surface oriented poly-Si film on glass substrate has been a key requirement to realize high performance low temperature poly-Si thin film transistors (LTPS-TFTs). Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, (100)-dominantly oriented poly-Si film was realized with average grain size of approximately 20 μm × 2 μm in normal surface direction...
The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA...
A chevron-shaped cw-laser-induced single crystal growth in Si thin-film on rolled flexible substrate was proposed and demonstrated for roll-to-roll fabrication process. The substrate was bendable thin borosilicate glass with sputter deposited SiO2 and Si film, and was attached onto a rotating roll which rotated at a circumferential speed of 0.013 m/s during chevron-shaped cw-laser irradiation. Single...
Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics...
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.
The trends of recent technology are moving towards building system on panel (SOP), system on glass (SOG) or ‘see through’ display technologies as well as towards large area flexible electronics with cost effective process[1]-[2]. Therefore the technologists are focused on developing fully spin-coated low cost sol-gel Thin Film Transistor (TFT) with solution processed Indium Gallium Zinc Oxide (IGZO)...
PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions...
The crowdfunding has become a tangible alternative to the film industry in many countries, especially since 2009, the year in which the first specialized websites are born in this funding strategy. The network has made it possible through these platforms and the potential contributions of social networks, a creative one can be able to open to collective collaboration phase of audiovisual production,...
We have studied the UV reduction process of thin graphene oxide films, deposited on silicon substrate from ethanol suspension. Chemical structure of obtained material was analyzed by XPS method. TEM images showed holes formation during reduction process, that are connected into network. Films with observed structure have great variety of possible future applications, such as gas-sensors and different...
Silicon heterojunction solar cells have been the subject of growing research interest. Such cells replace the typical p+nn+ or n+pp+ structure of standard devices with selective heterojunction contacts, which block one type of carrier while allowing the other to pass freely (Fig. 1) [1-3]. Previously [4], we demonstrated a PEDOT/n-Si/TiO2 heterojunction cell fabricated below 100°C with no p-n junctions...
The purpose of this research is to evaluate the drain breakdown voltage of n-channel FD-SOI four-gate MOSFETs. Our approach is on the basis of three dimensional solution of Poisson's equation with proper boundary conditions for the surface potential and electrical field distribution. The model is extended to derive a model for the drain breakdown voltage which can predict the drain breakdown voltage...
In this study, a novel Flowable CVD process using non-carbon silicon based precursor has been developed for gap filling in 450mm wafer level, sub-20nm STI structure. To achieve 450mm wafer with aspect ratio 5:1 STI structure, guided DSA patterning and a-carbon hard-mask are applied. The various conditions have been screened in deposition, cure and anneal processes in order to result a void free and...
As dimensions shrink with each successive semiconductor technology node, the critical size of defects that can impact yield also shrinks. Monitoring the health of process equipment rigorously and regularly for key sources of contamination must be performed. Comparison of the critical feature size per technology node with the typical defectivity size used for process control shows a widening disparity...
Zeolite porous films have been produced by spin coating deposition at low temperature according to a procedure fully compatible with integrated circuit technology. Optical polarization properties of the deposited film have been studied by the modulation-polarization spectroscopy technique. Low-dielectric properties and internal porosity structure of the zeolite on Si wafer can be obtained. The aspects...
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