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Increasing ion source life and output remains a key challenge to improving the productivity and cost of ownership of ion implant tools. This paper describes how recent developments in source design, materials selection, and operation, combined with the careful optimization of gas chemistries, have improved source performance, particularly for dedicated species operation.
In this work, a sub-10 nm high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices with symmetrical N/PMOS characteristic were fabricated by a new hybrid dopant technology of plasma immersion ion implant (PIII) with traditional ion implant. This method was demonstrated to effectively reduce contact resistance and increase driving current of 18% in FinFET device. A remarkable...
The characteristics of the pulsed power switch reversely switched dynistor(RSD) based on Si and SiC are analyzed by contrast in the view of the device models, and the advantages of the RSD fabricated by the wide bandgap semiconductor SiC are illustrated in this paper. By establishing the two-dimensional numerical models of the devices, combined with the external circuit models, the blocking characteristics...
Composite ceramics TiN/Ti5Si3 is of a great interest due to its high hardness, fracture toughness, electrical conductivity and uniquely high resistance to erosion and oxidation up to 800 Celcius degree. The main problem is connected with the synthesis of necessary raw materials for ceramics sintering. Earlier it was shown the possibility to implement one stage synthesis of main components using plasmodynamic...
Experiments confirmed that the process of plasma chemical etching of silicon in chlorine containing plasma is well compatible with a photoresist mask. Dependences of rate of plasma chemical etching of silicon on value of flows of oxygen and freon, anode current, sample location in the reactor, physical characteristics of silicon sample, etching time are studied. The plasma chemical etching of silicon...
We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe...
One of the major lines of solar energy development is the creation of environmentally friendly, wasteless and cheap solar-grade silicon production technology. Currently the main silicon production technologies are based on reduction of silicon hydrogen chloride compounds: trichlorosilane, tetrachlorosilane, monosilane. These technologies use harmful and potentially dangerous compounds in quantity...
The Differential Absorption Hard X-ray (DAHX) spectrometer has been developed to diagnose photon energies above 80 keV and provides a time-resolved measurement of the x-ray spectrum from the plasma driven by Z. The DAHX spectrometer is a revitalization of the Hard X-Ray Spectrometer (HXRS) fielded on Z prior to refurbishment1. DAHX consists of an array of seven collimated silicon PIN diodes with varying...
Sulfur hexafluoride (SF6) plasmas are commonly used in the deep etching of silicon (Si), silicon oxide (SiO2) and more recently silica glass [1]. Due to the complexity of fluorinated plasma environment during Si-based material etching, there are few works presenting experimental and/or theoretical studies about the chemistry established. However, the chemical behavior of the plasma has a direct influence...
Three-dimensional integration with throughsilicon vias is becoming essential for the future of the microand nano-electronics industry. The ability to incorporate multiple wafers and systems in a single design is revolutionizing device packaging. However, the complexity in the fabrication of through-silicon via structures and the reliability concerns must be addressed. In this work the effects of the...
Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, practical integration of Ge-rich SiGe into devices is complicated by its unique physical and chemical...
Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5nm conformal shallow junctions at low energy with no silicon structure damage. N-type PH3 plasma assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma assisted doping at high wafer temperature showed no structure damage even at a high...
Ultra-wide band ladder filters with bandwidth of 41 to 51%, which fully cover the digital TV band, were fabricated using 0-th shear horizontal (SH0) mode plate wave in a (0°, 117.5–120°, 0°) LiNbO3 (LN) ultra-thin plate. A LN/cavity/Si wafer with a number of devices must be separated into chips as they can be mounted on a printed circuit board (PCB). When the wafer is separated using a dicing machine,...
We propose a simple yet effective method for the display based on vapor condensation on the hydrophilic/hydrophobic patterned surfaces. It was found that supersaturated water vapor first formed nanometer-sized water droplet on the condensation nuclei on the patterned surfaces, then the water droplet grew bigger and therefore scatter more light to visualize the outline of the patterns for naked eyes...
In this paper, we investigated two dimensional simulation study of a germanium source doping-less tunnel field effect transistor (TFET). Use of low band gap material such as germanium is an effective way to increase tunneling. By using germanium at only source side off current increases less in compare to whole germanium device. By presenting the comparative study of conventional doping-less TFET...
To solve the low implantation rate of in-vitro fertilization (IVF), zona-free oocyte is widely used in IVF [1]. However the process of zona-removal is not only tedious but also easy to harm the fragile oocyte. In this work we introduce a 3-dimensional microfluidic device to simplify the zona-removal process, and the applied gentle process is also capable to keep oocyte intact and precisely locate...
In this paper, the TCAD simulation of charge plasma based double gate junction-less transistor with channel length of 18nm is analyzed. The structure shows better ION/OFF ratio(107) compared to the conventional junction less transistors (JLT). The use of charge plasma concept for inducing n+-n+-n+ regions and generating free charge carrier for conduction makes the process of fabrication easier for...
Pattern-dependent non-uniformities were studied in this work focusing on a depth loading effect in 28 nm node STI. Both positive and negative depth loadings, which mean the trench depth difference between isolated and dense structures, were observed depending on selected gas chemistry. It has been shown that by utilizing a Cl2/O2/N2 plasma for Si patterning, a negative depth loading was more attributive:...
In this study, OES (Optical emission spectrometer) was used to diagnose the variations of plasma species. QMS (Quadrupole mass spectrometry) was utilized to examine the concentration of free radicals in plasma. The epitaxial silicon thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The film properties related to thickness and crystallinity were investigated...
Recently many issues came up when using conventional dicing methods. Such conventional methods are mechanical sawing (blade dicing) or laser dicing or stealth dicing. Relevant applications are thin wafers, brittle materials and wafer singulation for very small devices or LED or discretes. Plasma dicing is a recommended method to overcome many challenges of wafer separation. Damage free, water free,...
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