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A high temperature ion implanter called as IMPHEAT® for SiC devices and a high temperature ion implanter called EXCEED® are developed by Nissin Ion Equipment Co., Ltd. They are based on the mainstream ion implanter of EXCEED®, a field proven tool for more than 10 years, so they are suitable for the mass production of both SiC devices and Si devices. IMPHEAT® can run 4″ and 6″ SiC devices, including...
Buckled membranes are commonly used in microelectromechanical systems (MEMS) structures. One application of a microfabricated membrane is pressure sensing. A differential pressure across the membrane causes deflection, up or down, which can be measured and related to a specific pressure change. Recent work has demonstrated that the deflection and stiffness of these membranes can be tuned through localized...
The application of correcting small temperature non-uniformity on Silicon wafers using local irradiation with spatially scanning laser beams was analyzed. The objective of the study was to understand the specifications of such a laser beam to elevate the temperature of a wafer locally by 1 to 5°C. A detailed analytical model has been developed for predicting power level, exposure time, scanning speed,...
An array system of optically pumped atomic magnetometers (OPAMs) that uses potassium vapor cells requires the quantity of potassium enclosed in the cells to be uniform. We describe a tablet-shaped potassium source, which generates a fixed amount of potassium, for fabricating homogeneous vapor cells. The tablet consists of a tiny microstructured plate covered with a layer of raw materials. Two sets...
In this paper, we introduce a two-dimensional Generalized Autoregressive Conditional Heteroscedasticity (GARCH) model for clutter modeling and anomaly detection. The one-dimensional GARCH model is widely used for modeling financial time series. Extending the one-dimensional GARCH model into two dimensions yields a novel clutter model which is capable of taking into account important characteristics...
An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency;...
Organ failure is a condition where an organ system not able to function as intended, preventing the body from maintaining homeostasis. An organ transplant replaces the patient's organ with a donated organ, but the procedure includes several risks, such as rejection or infection. Organ printers aim to eliminate some risks involved with organ transplantation by producing an organ from the patient's...
The curing process of flip chip (FC) on flexible printed circuit boards (FPCB) was introduced. The structure of equipment was analyzed. The possible effect of equipment structure was evaluated. Different finite element analysis (FEA) models in different situations were built. Thermal influence parameters were verified for curing process by comparing FEA models and actual products. The parameters of...
Micro Hotplates are extensively used in chemical sensor, flow sensor and other micro systems. In this paper, we have presented the design, modeling and simulation results of serpentine, spiral and fan shape micro heaters based on standard Multi User MEMS Process for fabrication in a multi product wafer run. The heater structure was optimized to get good temperature homogeneity, low power consumption...
The modern SiGe HBT structure with shallow and deep trench isolation (STI and DTI) is analyzed from electrothermal standpoint using TCAD system. The electrical parameters β, fT, fmax, maximal temperature Tmax, and thermal resistance RTH are under consideration. TCAD simulation confirms the fact that the presence of STI and DTI in SiGe HBT structures gains the self-heating effect in comparison with...
Amongst the cooling solutions proposed to mitigate heat hazard effects in microelectronics, heat spreaders seem to be one of the most suitable when thickness and space constraints are considered. This work proposes the use of graphite-based materials as heat spreaders for thermal management of flipchip configurations. Experimental tests and numerical simulations show a significant improvement in the...
DMOS transistors in integrated smart power technologies are often subject to cyclic power dissipation with substantial self-heating. This leads to repetitive thermo-mechanical stress, causing fatigue of the on-chip metallization and limiting the lifetime. Hence, most designs use large devices for lower peak temperatures and thus reduced stress to avoid premature failures. However, significantly smaller...
As the I/O density and speed of electronic devices increase dramatically, fine pitch copper-pillar flip chip becomes a very popular choice of technology for high density interconnects. The bonding processes for these packages are classified as post-applied underfill bonding processes and pre-applied underfill bonding processes [1-3]. These bonding processes have been studied intensely. Robustness...
This paper reports on a fabrication method of three-dimensional micro structures supported by a Parylene thin film. The three-dimensional structure formation procedure starts with an out-of-plane actuation of the Si surface micromachined structure coated with a thin Parylene film. At the same time of the actuation, the environmental temperature was elevated above the glass transition temperature T...
3D ICs are assumed to suffer from stronger thermal issues when compared to equivalent implementations in traditional single-die integration technologies. Based on this assumption, heat dissipation is frequently pointed as one of the remaining challenges in the promising 3D integration technology. This work brings an overview of the thermal impact of the 3D integration technology, providing means to...
3D technology is envisioned to offer advanced integration capabilities, enabling heterogeneous system integration and offering improved performance and reduced power consumption thanks the so-called Through Silicon Vias (TSVs). Nevertheless, 3D integration is facing strong thermal issues due to its higher power density and reduced heat dissipation properties. In previous studies, it has been often...
We investigated the role of Nitrogen in the luminescence emission of amorphous SiOxNy layers irradiated by Infrared Laser. Variable content of Nitrogen (0-22%) has been obtained by magnetron sputtering or plasma enhanced chemical vapor deposition techniques. We demonstrate that emission is obtained from the amorphous matrix and the emission peak shifts towards longer wavelengths with increasing the...
We propose a novel low-power CMOS circuit to monitor the optical modulation amplitude of a Si ring modulator, and successfully demonstrate its operation in a wire-bond integrated CMOS Si photonic ring transmitter.
A phonon transport simulator using a Monte Carlo method is used to analyze the heat conduction properties in FinFET structure. We compare the simulation results to those obtained from the conventional heat conduction equation based on the Fourier's law, and discuss about the discrepancies attributed to ballistic transport effect. We also analyze the impact of additional heat path through gate contact,...
This paper introduces a novel material, few layer graphene (FLG) to theoretically improve the thermal and mechanical reliability of an laterally diffused metal oxide semiconductor (LDMOS) field effect transistor (FET) under high power microwave (HPM) pulses. With graphene attached locally, on the hot spot between the gate and drain of the LDMOS. The transient lateral temperature distribution of FLG...
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