A high temperature ion implanter called as IMPHEAT® for SiC devices and a high temperature ion implanter called EXCEED® are developed by Nissin Ion Equipment Co., Ltd. They are based on the mainstream ion implanter of EXCEED®, a field proven tool for more than 10 years, so they are suitable for the mass production of both SiC devices and Si devices. IMPHEAT® can run 4″ and 6″ SiC devices, including HPSI-SiC based devices with a wafer temperature of 500°C, while high temperature implanter of EXCEED® can do 8″ and 12″ Si wafer implantation with a wafer temperature of 450°C.