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Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
We show that scaling rules, quantum confinement in thin bodies, and the resulting gate leakage render imperative the use of low-dimensionality materials as channels in devices scaled beyond the 10 nm gate length. We then consider a few examples of two-dimensional materials of great interest, graphene and bilayer graphene, and show how the dielectric environment (gate and interlayer insulators, nearby...
We briefly discuss the evolution of Non-Volatile Memory (NVM) technology in term of macro-trends and their implications for modeling activities in an industrial R&D environment. Some examples of difficult modeling issues for different NVM techologies are mentioned, and finally both present needs and future challanges are critically reviewed.
Due to the mass consumption of fossil fuels since the 20th century, the automotive industry is facing various issues, such as the depletion of fuel resources and worsening air quality. Power semiconductor devices can help to resolve these issues by facilitating the development of technologies to save energy and diversify fuel usage. This paper describes the requirements and outlook for power semiconductor...
Embedding TCAD engineers in technology working groups has been an integral part of Intel's process development strategy since the company's inception. While this strategy remains the same, the challenges faced and the tools used by TCAD has undergone dramatic change over the last 20 years. This talk will discuss three recent trends in process and device TCAD: the rise in the use of “atomistic” scale...
A phonon transport simulator using a Monte Carlo method is used to analyze the heat conduction properties in FinFET structure. We compare the simulation results to those obtained from the conventional heat conduction equation based on the Fourier's law, and discuss about the discrepancies attributed to ballistic transport effect. We also analyze the impact of additional heat path through gate contact,...
In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB-EMC transport engine for a 1D electron gas with a 3DPoisson-2DSchro¨dinger solver. Here we use a FinFET with a physical...
The impacts of FinFET channel and extension S/D region implantations on relevant device parameters such as electrostatic control and Vth mismatch (MM) are investigated. We used 3D TCAD process and device simulations to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed using diffusion, activation...
In this paper, analytical gate fringe capacitance model of FinFETs including metal contact and raised source and drain (RSD) are developed. Each cross capacitance models are derived using conformal mapping and field integration. The proposed models are verified with a three-dimensional field solver, Raphael. By including the additional fringe capacitance from RSD and metal contact in BSIM-CMG platform,...
A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order...
In this work we investigate the charge transport in sub-stoichiometric TiOx for RRAM applications. We explored the atomic defect configurations actively assisting the charge transport in sub-stoichiometric TiOx through a multi-scale approach. We combined density-functional-theory-based non-equilibrium Green's function approach (DFT_NEGF) with physical-based trap assisted tunneling (TAT) modeling to...
We demonstrate a dynamic Verilog-A RRAM compact model capable of simulating real-time DC cycling and pulsed operation device behavior, including random variability that is inherent to RRAM. This paper illustrates the physics and capabilities of the model. The model is verified using different sets of experimental data. The DC/Pulse parameter fitting methodology are illustrated.
An electro-thermal resistive switching model based on O-Frenkel pairs is presented. This model relies on partial differential equations and is used to simulate reset and set mechanisms for HfO2-based RRAM devices starting from an existing conductive filament. First simulations indicate that the model can fairly reproduce experimental ON and OFF resistances.
TCAD simulations of power devices are an important tool to investigate destruction mechanisms of power diodes and IGBTs. It is found that the dynamics of filamentation is the key for understanding the limits of the safe operation area. For both diodes and IGBTs, destructive and non-destructive filamentation mechanisms are identified and the resulting destruction mechanisms are discussed.
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