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CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performance and low power advanced LSIs in the future. In addition, the heterogeneous integration of these materials with Si can provide a variety of More-than-Moore and Beyond CMOS applications, where various III-V/Ge functional devices can be co-integrated. In this presentation, we review...
This work investigates the impacts of quantum confinement on the short-channel effect and band-to-band-tunneling (BTBT) of UTB Ge and InGaAs NMOS devices using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that, when the channel thickness (Tch) is smaller than a critical value (Tch, crit), the quantum confinement effect may decrease the threshold...
Progress in the synthesis and properties of crystalline semiconductor core optical fibers is reviewed. This new class of optical fibers may significantly advance the fields of nonlinear fiber optics and infrared power delivery.
We reconsider spin-orbit contribution to strain effects in semiconductors within six-valence-band k · p model. We demonstrate that standard procedure for including that contribution is generally wrong. Indeed, we show that taking into account the spin-orbital strain term of the effective hamiltonian does not modify the matrix form of the strain model in terms of deformation components. Consequently,...
In0.53Ga0.47As has become a material of interest for the continuation of Moore's Law because of its high bulk electron mobility compared to Si. One problem associated with small effective-mass semiconductors such as InGaAs is the density-of-states bottleneck, or the loss of gate-capacitance due to the low density-of-states in the conduction band. The delta-doping profile is one way to reduce the effective...
Studies of tin (Sn) whiskers have emphasized the role of intermetallic compound formation at the tin-substrate interface, which induces a high compressive stress state in the film, thought to be a necessary condition for Sn whisker growth. The goal of this work was to determine if whisker growth is possible from films where intermetallic compounds are largely absent. Thin films (~ 1600 Å) of Sn were...
Two- dimensional (2-D) photonic crystals (PhCs) of square lattice have been investigated to find the complete photonic bandgap. Band diagram calculations have been performed using the simulator “PWE band solver” of the software package optiFDTD™, based on plane wave expansion method. GaAs dielectric rods in air background with four different shapes have been considered. Filling fraction, rod/air hole...
Tip-enhanced Rayleigh scattering images of Ge quantum dots grown on Si substrate have been observed. Changing the wavelength of the incidence light, the contrast of the images is reversed. It is found that the scattering intensity depends strongly on dielectric constants of materials under the probe. Tip-enhanced photoluminescence of In0.3Ga0.7N films has also been reported. The strong local enhancement...
Si, Ge and III-V based MOSFETs can be limited by Fermi level pinning (FLP) at their interfaces. Pinning can arise from either intrinsic (metal induced gap states, MIGs) or extrinsic (defects) mechanisms. Identifying the correct mechanism is not trivial, as both mechanisms follow similar chemical trends. However knowing the correct mechanism is important, as only extrinsic mechanisms can be corrected...
The following topics are dealt with: photonic integration technology; photodetectors; optical resonators and photonic crystals; rare earth doped materials; plasmonics and optomechanics; optical sensors and filters; nonlinear silicon photonics; photonic membranes; III-V on silicon devices; optical switching and modulation; and germanium gain and emission.
Up to 2.3% biaxial tensile-strained Ge layers have been grown on InGaAs/GaAs buffer layers. A dramatic increase in low temperature photoluminescence intensity for >2% strained Ge confirms the existence of a direct band gap Ge.
We report recent experimental results of two kinds of photodetectors developed in the framework of the European project HELIOS: InAlAs-InGaAs metal-semiconductor-metal photodetectors and germanium photodetectors.
The electronic band structure of relaxed and biaxially strained Si, Ge, III-V semiconductors (GaAs, GaSb, InAs, InSb, InP) and their alloys (InxGa1-xAs, InxGa1-xSb) on different interface orientations, (001), (110) and (111), is calculated using the nonlocal empirical pseudopotential method (EPM) with spin-orbit interaction using cubic spline interpolations of the atomic form factors. For III-V alloys,...
We present theoretical results regarding the hole mobility in Ge, GaAs, InGaAs, InSb and GaSb p-channels with SiO2 insulator. The valence subband structure is calculated self-consistently within the framework of a six-band k . p and finite-difference methods. Various scattering processes, non-polar (NP) phonon scattering (acoustic and optical), longitudinal-optical (LO) phonon scattering (Frohlich...
We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.
Prospects of velocity enhancement as the main driver of performance scaling in future CMOS are examined. Limits of velocity enhancement in uniaxially strained Si are first presented and then outlooks of novel channel materials such as Ge and III-V semiconductors are discussed. Finally, characteristics of performance scaling under power dissipation constraints are studied.
This paper examines the potential of double gate (DG) inter-band tunnel FETs (TFET) in 3 different material systems, Si, Ge and InAs, for logic circuit applications down to 0.25 V supply voltage (V<sub>CC</sub>). Based on two-dimensional numerical drift-diffusion simulations, we show that 30 nm gate length (LG) InAs (indium arsenide) based TFETs can achieve I<sub>on</sub>/I<sub>off</sub>...
MBE growth of InP-based HBTs on GeOI/Si substrates is described. A GaAs buffer is nucleated on the GeOI; then a graded InAlAs metamorphic buffer transitions the lattice constant to InP. TEM shows minimal anti-phase boundaries and limited dislocations propagating into the device layers. Large area DC parameters are similar to LM HBTs grown on InP. Small area devices exhibit peak current gain cutoff...
In this talk, the author give a survey of this important technical field, and also efforts at National Nano Device Laboratories (NDL) for Si-based devices and architectures that maybe implemented along the roads toward 22 nm-node CMOS and beyond for more and more than Moore. In particular, the author deal with some device solutions using Ge or III-V semiconductors for enhancing performance and functionalities,...
In this paper, the light effective masses of the Ge and GaAs bandstructure, responsible for enhanced injection velocities compared to Si and s-Si are also responsible for a significant increase of SDT. When SDT is taken into account, and for devices with negligible SCEs, it has been found that Si and especially s-Si, offers a much better lon/loff trade-off than Ge and GaAs.
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