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The following topics were dealt with: novel device structures; space application and extreme environments; oxides and dielectrics; sensors and biosensors; modeling gate related effects; MEMS; silicon on insulator; organic materials and devices; flexible electronics; engineering education; electronic materials; electronic devices; device network applications; advanced device characterization; nanoelectronics;...
The authors fabricate and test two types of auxiliary resistive components that are essential for the optimization of ACT's transition edge sensor bolometers. The authors found that implanted silicon absorbers are adequate for effectively coupling radiation to the bolometers. Furthermore, development of methodology for fabrication of shunt resistors that will allow for tight optimization of bolometer...
In this paper we introduce a new design for the magnifying superlens and demonstrate it in experiments. Our design has some common features with the recently proposed "optical hyperlens", "metamaterial crystal lens", and the plasmon-assisted microscopy technique. The internal structure of the magnifying superlens consists of concentric rings of polymethyl methacrylate (PMMA) deposited...
We will discuss in detail the progress that has been made at RTI in developing chip-in-flex technologies, including specific applications such as sensors and implantable prostheses. We will discuss the advantages of this approach over traditional packaging techniques. We will also give an overview of related flexible electronics activities at RTI, including power, lighting, and sensor array technologies.
Contact effects in OFETs often play an important role and care must be taken to distinguish contact-limited charge injection from bulk-limited charge transport. In this paper, we report on charge transport in organic field-effect transistors based on (2,5-bis(3- tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1 cm2V-1s...
Summary form only given. Semiconducting 6,7,15,16-tetrakis(alkylthio)quinoxalino [2',3' :9,10] -phenanthro[4,5 - abc]phenazine, TQPP-[SR]4 for R= C12H25, C10H21, C8H17, and C6H13 has been synthesized as a solution-processable potential charge transport material for organic electronics applications (Kaafarani et al., 2007). We characterize the microstructure of TQPP-[SR]4 in films using a combination...
After forty years of progress in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern MOSFETs have channel lengths of less than 50 nm, and billion transistor logic chips have arrived. An intensive effort is underway across the world to push MOSFET as short as possible. What are the practical and fundamental limits to MOSFET scaling? To address these...
Summary form only given. Silicon carbide is a wide bandgap semiconductor whose intrinsic properties make it suited for high-power, high-temperature, and high frequency applications. Additionally, SiC has potential for the fabrication of metal-oxide-semiconductor (MOS) power supplies because it forms a native oxide in the same manner as silicon. The structure of the interface between the native oxide...
The excellent electronic, thermal and mechanical properties of single-walled carbon nanotubes (SWNTs), together with the ability to integrate them onto a wide range of substrate types, create opportunities for their use in various areas of electronics, ranging from heterogeneously integrated systems for applications in communications to large area distributed circuits for flexible displays.
SiGe BiCMOS technology is presently being used as an IC design platform to support the development of electronic components designed to operate under the harsh lunar ambient conditions. The opportunities and challenges associated with utilizing SiGe technology in the general context of extreme environment electronics applications are addressed in this paper.
This presentation will first summarize some of the most recent silicon innovations made for advanced CMOS transistors in the nanotechnology era for high-speed and energy-efficient VLSI digital applications. Through these Si nanotechnologies, it is expected that the CMOS scaling and improved performance trends will extend and continue well into the next decade. In addition, there has been good progress...
Summary form only given. In the light of industry and teaching experiences, a total often engineering technology programs were appraised for the purpose of making recommendation for continuous program improvement. Programs in which basic courses such as physics, chemistry, and electronic devises are taught by traditional sequential methods may not always help students recognize the relationship of...
Flat Panel Displays (FPD) are becoming increasingly more popular for such applications as cell phones, PDAs, MP3 players, automobile navigation systems, computer monitors and televisions. The bulk of FPDs utilized in these, and other, applications are Liquid Crystal Displays (LCDs). The mainstream backplane technology in these displays is based on amorphous silicon (a-Si) but for a number of reasons...
Summary form only given. We report on the design, fabrication and testing of a back-illuminated, voltage bias selectable, dual band deep ultraviolet (UV) AlGaN photodetector for integration into space spectroscopic instrumentation. The photodetector can separate UV-A and UV-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward...
In organic thin-film transistors (OTFTs) the intrinsic properties of the semiconductor are generally masked by structural defects which localize and trap the charge carriers and contact effects, which limit charge injection and cause deviation from ideal linear and square-law behavior. Thus, their electrical characteristics are strongly dependent on the fabrication conditions. We perform current-voltage...
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