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The interaction distance between Si nanoluster and Er is investigated using multilayers. We find that the effective sensitization distance can be more than twice the cluster-Er interaction distance due to Er-Er energy transfer.
We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.
We present a simulation approach to estimate the effect of disorder induced backscattering in slow light photonic crystal line-defect waveguides. The backscattering leads to localization and thus limits the maximal length of such waveguides. Loss in passive waveguides in the localization regime reduces ripples in spectral transmission and group delay whereas gain increases these resonant multiple...
We demonstrate a distortion free tunable delays as long as 72 ps with a 10 GHz bandwidth using thermally tuned silicon microring resonators. The device is compact measuring only 30 mum wide by 250 mum long.
The following topics are dealt with: photonic integration technology; photodetectors; optical resonators and photonic crystals; rare earth doped materials; plasmonics and optomechanics; optical sensors and filters; nonlinear silicon photonics; photonic membranes; III-V on silicon devices; optical switching and modulation; and germanium gain and emission.
Using a single active material, we demonstrate hybrid silicon lasers having 4 different wavelengths spanning >100 nm. Measurements show that performance is similar for lasers operating at 1450, 1475, 1510, and 1560 nm.
Ga(NAsP) multi quantum well heterostructures were grown pseudomorphically on exactly oriented (001) silicon substrates without the formation of misfit dislocations. Optical pumped lasing operation was observed at temperatures up to 125 K.
Light emission at 1.54 mum from Er-doped amorphous silicon nitride layer coupled to high quality factor photonic crystal resonators is studied. Resonances exhibit line-width narrowing with pump power, signifying differential gain in the material.
Bipolar (electrons and holes) charge injection, the onset voltages of electroluminescence as low as 1.4 V, and power efficiency of around 0.2% are demonstrated in thin nanocrystalline-Si/SiO2 multilayer LEDs grown by plasma-enhanced CVD.
We propose a two-stage lasing device in which an electroluminescent Si nanocrystal (Si-nc) disk optically pumps a concentric Er:SiO2 toroid. We also present fabrication and characterization of an Er:SiO2 microdisk and demonstrate coupling of Si-nc emission to a concentric SiO2 ring.
This paper proposes an optical circulator employing a nonreciprocal phase shift with a silicon waveguide. Two types of optical circulator are investigated, a perfectly circulating 4-port optical circulator and a 3-port optical circulator.
Integration of a polarization insensitive inverted taper-based fiber coupling structure with silicon etched V-grooves is demonstrated in CMOS silicon photonics. Coupling loss of 7.5 dB are measured at lambda=1.55 mum. A spectrum broader than 70 nm is observed.
Er2SiO5 crystal shows strong and sharp Er-related PL emissions at room temperature. It is expected as a basic material of waveguide amplifiers in silicon photonics. Recently we have proposed Er2SiO5 crystal preparation by Pulsed Laser Deposition (PLD) method for device applications. In this paper we introduce PLD approach to modify crystalline structures of Er2SiO5 crystal and the related materials...
Negative photo-conductivity, super linear variation of short circuit current with incident light power, and IR absorption have been observed in Si-rich oxynitride film containing silicon nanocrystals and the mechanism was discussed.
We report a Ge/Si APD with a gain of 8.8 when biased at 90% of breakdown voltage operating at 1310 nm. The dark current density is less than 82 uA/cm2 at biases up to -20 V.
Effects of slot geometry on the slot-mode overlap and Q-factors of horizontal slot microdisk resonators are investigated by FDTD method. Optimum parameters are suggested, with particular emphasis on bio applications.
Ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. Optical gain and population inversion are obtained on a femtosecond time scale. A microscopic theory supports the results.
We propose and simulate a thin-film crystalline solar photovoltaic cell comprised of two junctions - one in the Si top layer and the other in the Ge bottom layer. Assuming an anti-reflection coating on the front surface, we have shown that optimal solar cells favor a thin Si layer and a thicker Ge layer. For AM1.5G solar irradiance, we predict efficiency of ~20 % for a cell in which the Si film thickness...
Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH3 during Ge deposition gives n-type poly-Ge with...
We use photonic crystal nanocavities to enhance the light emission for Erbium implanted silicon. This is a promising route for the realization of a silicon light source.
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