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As RF design scales to the 28nm technology node and beyond, pre-silicon simulation and verification of complex mixed-signal/RF SoCs is becoming intractable due to the difficulties associated with simulating diverse electrical effects and design bugs. As a consequence, there is increasing pressure to develop comprehensive post-silicon test and debug tools that can be used to identify design bugs and...
Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) and testing pad that ranging from 20 µm, 50 µm, 100 µm to 200 µm has been made to verify the Radio-Frequency (RF) characteristic of TSV. We propose the modified RF electrical equivalent model of TSV with its' de-embed patterns. With...
Silicon nanopowders have been synthesized from micrometric Si precursors using lab-scale radio-frequency induction thermal plasma (RF-ITP) system. The latter is composed of a commercial inductively coupled plasma torch (Tekna PL-35) mounted on a reaction chamber characterized by a cylindrical geometry [1, 2] under soft vacuum. Nanopowder samples have been collected at different positions in the reaction...
Electrostatic Discharge (ESD) protection for advanced CMOS technologies is a challenge due to down-scaling which introduces a reduction of the intrinsic robustness. Moreover, another challenge is the RF ESD protection in analogue IO pad. Thus, when you merge both topics the challenges are major. This paper shows a methodology, tools and silicon measurements of ESD RF parasitic capacitance in C65nm...
A p-n junction under reverse bias avalanche breakdown condition is capable of producing high frequency rf power in Impatt mode. With the advancement of Device Technology, the present state of art reports realization of alloy Si-Ge junction, Si-Ge hetero junction. Introduction of a n-Ge and p-Ge impurity bumps near the junction face on respective side of Si p-n junction leaves an asymmetrical hetero...
The effect of RF discharge structure on silicon etching process in CF4/O2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma. The model includes the equations of multicomponent physical-chemical hydrodynamics describing convective-diffusion transfer and production...
As an RF power device, SOILDMOS has a huge market demand and broad development prospects. In this paper, we conduct extensive measurement of the SOILDMOS chip using the vector network analyzer, microwave probe station, semiconductor parameter analyzer. The measuring results are obtained with Agilent IC-CAP 2008. With these results, SOILDMOS can be modeled based on the HiSIM-HV model. The parameter...
The effect of RF discharge structure on silicon etching process in CF4/O2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma. The model includes the equations of multi-component physical-chemical hydrodynamics describing convective-diffusion transfer and production...
On-chip inductors are recently in high demand even for digital applications due to strict jitter and phase noise requirements in oscillators. Accurate and fast modeling techniques are needed to enable low-cost and fast silicon turnaround. We present a fast and accurate methodology named scaled, iterative, and sampled (SIS) non-linear least squares optimization to extract wide-band model parameters...
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