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In the frame of hydrodynamical approach a technology of plasma-chemical etching silicon in CF4/H2 plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F2, CF2, CF3, CF4, C2F6, H, H2, HF, CHF3, CH2F2. In the etching process a most part of fluorine goes on formation of component HF, that essentially reduces the etching rate of silicon...
The effect of RF discharge structure on silicon etching process in CF4/O2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma. The model includes the equations of multicomponent physical-chemical hydrodynamics describing convective-diffusion transfer and production...
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