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Gallium Nitride (GaN) based devices on Silicon (Si) substrates (GaN-on-Si) promise unmatched performance at low cost. Despite this theoretical promise, the lattice and thermal conductivity mismatch between the GaN and Si has obstructed the realization of reliable electrically graded high voltage devices. Recently, a small number of manufacturers have claimed the successful development of such devices...
This paper presents a new CMOS stress sensor readout method based on the ratiometric measurement principle. A unique feature of this method is to simultaneously detect the in-plane stress magnitude and angle. The sensor core is a cascoded current mirror structure consisting of a reference input branch and four output branches with MOSFETs in 0°, 45°, 90° and 135° layout orientations. Current ratios...
We demonstrate a battery-powered wearable respiration sensor chip, which monitors current due to the Grotthuss mechanism along the surface of a partially-oxidized silicon nanocrystal film. The current response is fast enough to follow humidity change due to human respiration. The response and recovery time are 72 and 44 ms, respectively. The sensor chip and a peripheral electrical circuit are mounted...
In many cases it is important to measure the temperature and the thermal conductivity of an object by contact. Examples include sensors in robot hands, and sensors to measure material properties during manufacturing. In this paper, we demonstrate the ability to measure the time-of-flight (TOF) as a function of time after mechanical contact to the transducer, and show that the rate of TOF change can...
In this report, we study of fundamental research for a high positional resolution of pulse electro-acoustic (PEA) method. Positional resolution of PEA method depends on a pulse width of the applied pulse voltage and a traveling time of the acoustic signal through a piezo electric sensor. Our laboratory tried to develop a thin sensor using the polyvinylidene fluoride (PVDF). Consequently, we succeeded...
This paper describes two approaches to increase the energy efficiency of on-chip terahertz (THz) integrated circuits and systems. First, we present designs of multi-functional electromagnetic structures that utilize mode orthogonality and near-field interference to achieve simultaneous oscillation, harmonic generation, signal filtering and radiation. This leads to ultracompact THz circuits with low...
This work proposes and describes in details a complete setup solution for testing of non-encapsulated electronic devices under mechanical stress. The equipment was implemented and calibrated to later use in electrical characterization of devices, such as MOSFETs and diodes under controlled mechanical stress. The semiconductor bending equipment allows the electrical characterization of devices using...
Thin film deposition process invariably introduces compressive or tensile stress in the films. The stress in a film causes the wafer to warp whose curvature is estimated in a wafer fab using optical reflectance technique. Alternatively, the wafer curvature can also be measured using the high resolution XRD (HRXRD) Si(004) rocking curves. In this paper, the HRXRD technique was employed to evaluate...
The homodyne detector is a primitive element in many quantum optics experiments. It is primarily a characterization device, used for measuring the quantum state of the electromagnetic field[1]. Quantum integrated photonics[2], in which optical sources, circuits, and detectors are monolithically integrated on a semi-conductor chip, provides a compact, scalable, platform in which to implement quantum...
Recent embedded ReRAM has a small resistance-ratio (R-ratio), which results in a small read sensing margin (ISM). A larger BL current (IBL) increases the input offset (IOS) of current-mode sense amplifiers (CSA), resulting in low-yield read operations and long read access times (TCD). This work proposes an IBL-aware small-IOS CSA, using a dynamic trip-point-mismatch sampling (DTPMS) scheme to increase...
The increasing demand for higher performance of ULSI circuits requires aggressive shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). Despite advancements in plasma processing, the degradation of material properties due to plasma...
This paper presents a fully integrated class-A mode Differential Power Amplifier (DPA) on a thin silicon substrate intended for being embedded into flexible electronic foil systems. A high-speed and cost-effective 95 GHz-fmax, 0.25 μm SiGe:C technology (IHP process SGB25V) is used. RF performance of DPA has been evaluated with the pre- and post-thinning measurement results at die level. The behavior...
An experimental method was introduced for understanding the exact relationships among polarization, coercive field, and electric field across the ferroelectric layer. They characterized the ferroelectric properties closed inside the metal/ferroelectric/insulator/semiconductor gate stacks. Using the method, we found that N2-dominant-gas annealing process was effective for improving the ferroelectricity...
This paper reports on a rectifier with 100 mW class dc output at 5.8 GHz using a gallium nitride (GaN) shottly barrier diode and silicon (Si) matching circuit. The originality of the study lies in its adaptation of the hybrid semiconductor integrated circuit (HySIC) technology that utilizes different types of semiconductors. We have completed the basic steps for developing a rectifier based on the...
The double taper-type mode convertor for direct bonded GaInAsP/SOI hybrid photonic devices was proposed and the characteristics of the fabricated structure using plasma activated bonding were measured. The calculated and measured results showed the coupling efficiencies of 90% and 75%, respectively.
Label-free DNA detection by silicon-based field effect devices has been widely studied in recent years. DNA recognition is based on the detection of changes in the electrical surface potential and thus requires reliable and selective immobilization of charged biomolecules on the device surface. Self-assembled monolayers of phosphonic acids (SAMPs) can be used as an underlying platform to prepare well-defined...
Silicon interposer and bridge is a multi-chip 3D technology that enables high density die-to-die interconnect on a package substrate. It opens a new era for heterogeneous on-package system integration. This paper presents an overview of this packaging architecture and its capabilities from concept to results. The overall components are introduced and discussed including constituent building blocks,...
Full-duplex (FD) radio communication potentially doubles the spectral efficiency in the densely occupied RF spectrum (100MHz to 5GHz). However, significant challenges remain, particularly the presence of a strong transmitter (TX) self-interference (SI) coupling to the receiver (RX). Numerous recent efforts on mitigating SI have focused on using active cancellation techniques [1–5]. However, these...
We present a novel μrespirometer to determine the oxygen consumption rate (OCR) of mammalian cells. The oxygen concentration is measured with the fluorescent dye PtTFPP in a polystyrene-matrix. This film is integrated into a closed microfluidic chip made out of only oxygen-impermeable materials like glass and silicon. This results in a low drift and thus allows long-term measurements with living mammalian...
This paper presents a 600 V, 55 mS GaN cascode with slew rate control. The time constants of cascodes which determine the switching speed are analyzed, discussed and verified by time domain simulations. Clamped inductive switching measurements of commercial and a custom-built GaN cascodes prove the applicability of the switching speed control mechanisms with additional passive components. The gathered...
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