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The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying contact. However, poly Irms can be estimated similar to metal Irms. Parameters for poly Irms calculation is provided on the basis of 5°C Joule heating.
At 28nm technological node, shallow trench top CD becomes narrower for tighten transistors density. Smaller space CD makes process control more difficult, especially uniformity control. On the early stage of our STI etching process developing, dense/ISO structure has opposition within wafer CD distribution map, which leads to device compromise. From our study, dense/ISO uniformity loading comes from...
Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that...
Self-heating effect in bulk FinFET is briefly studied in this paper. The layout dependence of thermal resistance and thermal capacitance are assumed and the correction method is proposed to improve the accuracy of thermal parameter. Measuring methods and their corresponding test structures are also summarized. Besides, two realization methods of self-heating effect for circuit simulation are also...
We report on the latest ultra-thick photo resist to fabricate high copper pillars over 100um for FO-WLP. The new resist shows excellent coating performance to achieve 100um thickness in a single coat, or over 200um thickness with double coating, on 12 inch wafer. The resist provides good coating uniformity without bubbles, defects, wrinkles or other errors. On top of that, the new material design...
We extract the trap density (Nt) profile of the nitride storage layer in 3-D NAND flash memory cells. The adjacent cells which are programmed suppress significantly the lateral diffusion during retention measurement so that we can extract accurate Nt profile. The AC-gm method makes the Nt profiling in an EC-ET range of 1∼1.2 eV possible, and provides a Gaussian Nt profile together with the retention...
The paper proposes a Ka band low noise amplifier (LNA) using 70nm GaAs metamorphic high electron mobility transistor (mHEMT). An ultra low noise three stage amplifier demonstrated an average noise figure of 1.1dB between 24GHz and 30GHz, an average small signal power gain of 27dB, a compact chip area of 1.5mm2 (with dicing streets) and a power consumption of around 80mW@1.5V power supply. The LNA...
Atomic Layer Deposition (ALD) is well known for its high film quality and high conformality, but limited by the low deposition rate. Beneq proposes a novel approach using Rotary Spatial Plasma Enhanced ALD process, which can reach deposition rates 10× higher than traditional pulsed ALD. This technology also enables use of PEALD in batch mode with high throughput. This paper describes the technology...
Deep Reactive Ion Etching (DRIE) has revolutionized a wide variety of advanced package applications. Cavity etch process is an important step for fan-out wafer level package (WLP), which general fabrication by DRIE. In this paper, we investigated the influence of process parameter on the profile and etch rate in square-hole cavity etch. Sidewall angle was controlled by fluorine isotropic etch. So...
CMP is becoming an enabling technology to meet the demands of precise machining of wafer surface in various applications. In this paper, dishing and uniformity performance of an 28nm STI-CMP process was studied with the influence of machine, slurry, polish pad, polish time, zone pressure and retaining ring force are analyzed, which affects the surface geometric parameter of silicon wafer. The results...
As technology developed, semiconductor moves to 10nm and the beyond. Since pitch becomes tighten and tighten, double patterning and triple patterning attracted researchers' attention [1]. Self-aligned double patterning (SADP) is one of the most popular double patterning methods. The primary idea of SADP is the core and spacer fabrication [2,3]. Herein, three commercial CCP etchers are employed for...
Tool-to-tool matching of optical proximity effect (OPE) properties is required and the procedure is called OPE matching. Nikon has developed a software called OPE Master for the purpose, which can decrease OPE errors with emphasis placed on critical dimension (CD) errors by optimizing exposure tool's parameters, such as lens numerical aperture (LNA), pupilgram intensity distribution, pupilgram distortion...
The temperature uniformity of thin film process is an important issue for susceptor in high temperature vacuum system. When the temperature of process is extremely high the uniformity is not only difficult to control, but also hard to maintain. In order to raise the temperature utilization at high temperature which is higher than 1300°C, the heating baffle is introduced for this purpose. As the result,...
Aluminium scandium nitride (Al1−xScxN) with its strongly enhanced piezoelectric response is the upcoming piezoelectric material of choice in next generation RF filters, sensors, actuators and energy harvesting devices. This paper will concentrate on the deposition technology for Al1−xScxN films with high Sc content. Films with Sc concentrations close to 43 at% have been grown on 200-mm substrates...
In this paper, different type of wax, wax content and hot hardness at 175°C on the release force and adhesion of molding compound were studied, The studies reveal that the hot hardness is playing a very important role to balance the conflict of reliability and moldability. With higher hot hardness of epoxy molding compound, the release force can be kept at same level with less wax content which can...
Silicon interposer and bridge is a multi-chip 3D technology that enables high density die-to-die interconnect on a package substrate. It opens a new era for heterogeneous on-package system integration. This paper presents an overview of this packaging architecture and its capabilities from concept to results. The overall components are introduced and discussed including constituent building blocks,...
Epoxy molding compound for LED bracket, with the merits of good resistance to heat and light damage as well as good reliability and warpage compared to traditional thermoplastic reflecting materials for LED bracket, such as Polyphthalamide (PPA) and Poly1,4-cyclohexylene dimethylene terephthalate (PCT), has becoming the focus of researchers. Here we studied the reflectance of the white epoxy molding...
By changing curing accelerator and modifying the volume resistivity of epoxy molding compound (EMC), electrostatic characteristics of EMC applied package can be improved and electrostatic damage of IC device was reduced. EMC with phosphonium salt accelerator results in much lower ESD failure than EMC with phosphine salt accelerator. Because the volume resistivity of phosphonium salt applied EMC is...
Advanced Packaging relies heavily on the use of organic/polymer films and mold wafers such as Fan-Out Wafer-Level-Packages (FOWLP). Processing of such wafers poses challenges, potentially resulting in a high contact resistance (Rc), yield loss, increased maintenance costs and low tool productivity. In this paper we focus on novel approaches how to overcome these challenges. It is shown that the combination...
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