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Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
Silicon carbide (SiC) has long been recognized as an ideal semiconductor for power electronics because of its wide bandgap, high critical field, high-quality native oxide (SiO2), and the availability of single-crystal SiC substrates. SiC diodes entered commercial production in 2002, and have accumulated hundreds of billions of hours in the field with a failure rate 10x lower than silicon parts they...
In this paper, design considerations for transitioning from a Si-IGBT based inverter to a SiC-MOSFET based inverter are discussed. An existing Si-IGBT power structure is modified using a footprint compatible SiC-MOSFET module, with changes made to the power structure and gate drive for the high PWM switching frequency required for SiC devices. Design issues such as inductance minimization, EMC mitigation...
Electricity generation currently accounts for 40% of primary energy consumption in the U.S., and over the next 25 years is projected to increase more than 50% worldwide. Electricity continues to be the fastest growing form of end-use energy. Power electronics are responsible for controlling and converting electrical power to provide optimal conditions for transmission, distribution, and load-side...
This paper addresses the replacement of enhancement mode Si IGBTs with depletion mode SiC vertical junction field effect transistors (VJFETs) in a commercial motor drive in current production. A Yaskawa A1000 CIMR-AU4A0088FAA motor drive was analyzed and found to have reliability and safety features that can be exploited to introduce normally on SiC transistors with no loss in safety or reliability...
This paper introduces a dead-time optimization technique for a 2-level voltage source converter (VSC) using turn-off transition monitoring. Dead-time in a VSC impacts power quality, reliability, and efficiency. Silicon carbide (SiC) based VSCs are more sensitive to dead-time from increased reverse conduction losses and turn-off time variability with operating conditions and load characteristics. An...
In this paper, the design of a multi-layer laminated busbar for a Si and SiC hybrid switch based 100 kW three-level T-type, single-phase, power electronics building block is presented. Due to the absence of three-level T-type topology in WBG based power modules at this power level, the PEBB design along with the busbar design is novel. This busbar facilitates the interconnection between the DC-link...
In this paper, key aspects of silicon-carbide (SiC)-based automotive traction drives are reviewed. Firstly, the required supporting factors to achieve optimal operating conditions and best performance are described. Major component sizing methodologies and constraints are included. Expectations on gate threshold voltage, trans-conductance, and transient oscillation are discussed. Tolerance against...
In order to determine how material characteristics percolate up to system-level improvements in power dissipation for different material systems and device types, we have developed an optimization tool for power diodes. This tool minimizes power dissipation in a diode for a given system operational regime (reverse voltage, forward current density, frequency, duty cycle, and temperature) for a variety...
This presents DC electrical characteristics and reliabilities of AlGaN/GaN metal-oxide-semiconductor heterojunction-field-effect transistors (MOS-HFETs) with HfO2 gate dielectric deposited by atomic layer deposition (ALD). Two types of oxidants were investigated, namely, water (H2O) and ozone (O3) for the ALD deposition. The comparison study reveals that GaN MOSHFETs with O3 oxidant results in overall...
This work reports the reliability of Infineon's CoolGaNTM 600V Enhancement mode GaN-on-Si transistors under high temperature reverse bias operation. Using the most conservative lifetime model; the extracted lifetime at use conditions of 480V, 125°C at 0.01% failure rate is greater than 70 years. The extracted activation energy (Ea) is 0.77eV with a single failure mode, Drain to Substrate. A common...
Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the LTCC substrates has been carried out by aluminum oxide buffering layers on the LTCC surface. Further depositions have been performed in an epitaxial reactor...
In this paper, performance degradation of thermally aged cascode GaN devices is presented in detail. For this purpose, an accelerated aging setup is designed which operates within safe operating area (SOA) to mimic the power cycling in real applications as much as possible. The parametric variations are measured via a curve tracer at certain intervals to find out critical signatures for incipient...
In this work, a novel dc-dc converter topology, an adaptation of the Hybrid Switched Capacitor Circuit (HSCC), is considered for use in high-gain, high voltage applications that also require high efficiency and superior power density. In particular, a bipolar HSCC design is described, and a candidate control methodology is set forth and developed analytically. The converter performance is demonstrated...
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