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Vertical GaN Junction barrier Schottky (JBS) diodes are fabricated on hydride vapor phase epitaxy (HVPE) GaN substrates. The p-type JBS gridded regions were formed by selective area doping by Mg ion implantation followed by an activation anneal. Implantation was performed into a 10 μm thick unintentionally doped GaN layer grown by metal organic chemical vapor deposition (MOCVD). Evaporating Pd/Au...
This work presents the operation of a PCB-embedded diode-clamped multilevel-converter integrated circuit (IC) fabricated in a lateral, high-voltage AlGaN/GaN-on-Si heterojunction technology. It is demonstrated, that PCB-embedding is an appropriate assembly technique for lateral power ICs with high-integration levels. By placing DC-link capacitors onto the IC-package, parasitc inductances in the power...
Gallium Nitride (GaN) semiconductors have extremely low switching loss, high breakdown voltage, and high junction temperature rating. These characteristics enable improved device performance and thus improved switch mode power converter designs. This paper evaluates the Pareto-optimal performance improvements for a DC generation system with predicted GaN loss characteristics and a rigorous multi-objective...
Low turn-on voltage junction barrier Schottky (JBS) diodes were fabricated using very thin (20 nm) and extremely highly Mg doped (2×1020 cm−3) p+-GaN layer placed on top of n−-GaN epitaxial layers grown on n-GaN substrates. By omitting p-GaN layers in conventional p+-GaN/p-GaN/n−-GaN vertical p-n junction diodes, device processing has been eased and low specific on-resistances (Ron<0.3 mΩcm2) have...
Power electronic converters use semiconductors to satisfy the needs of different applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can be processed virtually without defects. However, the limits of Si are being reached and in consequence, Si based semiconductors have limited voltage blocking capability, limited heat transfer capability, limited efficiency and maximum...
Recent development in GaN free-standing substrates have enabled fabrications of high performance vertical structure GaN devices. This letter reviews fabrication method of the high quality GaN substrates and reports increased breakdown voltages in vertical GaN p-n diodes fabricated on the substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages...
This work presents results of investigations of lateral and vertical Schottky diodes based on Molecular Beam Epitaxy (MBE) grown GaN/AlGaN heterostructures. We have used plasma assisted molecular beam epitaxy in metal rich conditions on freestanding GaN commercial substrates and GaN/sapphire heterosubstrates. The optimized technological procedures have been used to avoid parasitic conduction channels...
Lateral GaN-based Schottky diodes are promising for high-voltage, high frequency, low-loss power applications due to their low forward- and reverse charges resulting from the physical properties of the AlGaN/GaN-heterojunction. For GaN-Schottky diodes in the 600V/10A power range, reverse charges as low as 6nC can be achieved. The reverse current IRRM does not exceed 150mA at a switch-off slope of...
Technologies for microwave power transmission to small mobile equipment at 5.8 GHz are presented, including GaN Schottky barrier diode (SBD) for efficient and high power RF/DC conversion, rectenna circuits with voltage doubler pair to reduce signal reflection, and frequency modulation to control efficient charging condition in a microwave cavity box.
We report on epitaxial growth, processing, characterization and firsts photoresponse experiments performed on GaN/AlGaN lateral Schottky barrier diodes. The epitaxial GaN/AlGaN epistructures were fabricated by molecular beam epitaxy under metal rich conditions on the freestanding GaN substrates. The lateral Schottky barrier diodes were performed using modified transistor processing, which was based...
In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1% H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s,...
The Pd/GaN Schottky diode was investigated as the hydrogen gas sensors. The post-thermal annealing was found to improve the Schottky characteristics significantly, i.e., the reverse leakage current was 5.9×10−11 A at −5 V and the rectification ratio measured at ±1.0 V was 6.8 × 108. The hydrogen sensing characteristics was also significantly improved after thermal annealing, i.e., the maximum sensitivity...
Due to the mass consumption of fossil fuels since the 20th century, the automotive industry is facing various issues, such as the depletion of fuel resources and worsening air quality. Power semiconductor devices can help to resolve these issues by facilitating the development of technologies to save energy and diversify fuel usage. This paper describes the requirements and outlook for power semiconductor...
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.
This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ~ 0.4V, high reverse blocking voltage (VBR) of ~ 2400V, specific on-state resistance (RON.A) of ~ 14 mΩ.cm2 and...
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.
Reduction of ON resistance and OFF capacitance of GaN microwave rectifying diode is realized by applying T-shaped anode wiring together with increase of donor concentration in the active layer. The time constant defined by the product of ON resistance and OFF capacitance is reduced from 2.72ps to 0.79ps while the breakdown voltage decreased from 108V to 50V.
As part of a large reliability test campaign, a long duration high temperature storage test has been performed on GaN HEMTs to identify diffusion or contact related failure mechanisms. The storage test has been performed for 7000 hours and 17000 hours at 330°C and 275°C respectively and the changes in electrical and physical properties analyzed.
This paper investigates the feasibility of using diode-based predistortion for linearizing GaN power amplifier used in digital radio links. The predistortion linearizer circuit is built around diodes and resistors and can be operated from a DC supply voltage as low as 1 V. The proposed linearized amplifier is tested using QPSK signals. The results shows an improved performance for output powers up...
This paper presents an analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBD) operating under static and time varying conditions. The noise spectra obtained from Monte Carlo simulations (MC) of the SBDs show two resonances in the terahertz frequency region that are analyzed as a function of the SBD structure and working conditions. MC simulations are compared with published analytical...
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