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Low turn-on voltage junction barrier Schottky (JBS) diodes were fabricated using very thin (20 nm) and extremely highly Mg doped (2×1020 cm−3) p+-GaN layer placed on top of n−-GaN epitaxial layers grown on n-GaN substrates. By omitting p-GaN layers in conventional p+-GaN/p-GaN/n−-GaN vertical p-n junction diodes, device processing has been eased and low specific on-resistances (Ron<0.3 mΩcm2) have...