The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Scanning Thermal Microscopy (SThM) is a key technique for thermophysical property measurements with a submicrometric spatial resolution. The European project QUANTIHEAT “Quantitative scanning probe microscopy techniques for heat transfer management in nanomaterials and nanodevices” is centred around this technique. Project aims at solving the problems of thermal metrology at the nanoscale by delivering...
This work investigates light emission from silicon with embedded Sn nanocrystals. The composition of the nanocrystals is determined to be pure Sn by atom probe tomography, and the light emission is strongest when the nanocrystal structure is closest to the host Si lattice diamond structure.
A novel method to fabricate an atomic force microscope (AFM) probe with CuO nanowire was proposed using a stress-induced method which can form nanowire easily. By heating a commercial AFM probe which is eliminated its tip and is coated with Ta and Cu films, Cu hillock and CuO nanowires on the hillock can be formed at the probe end. To obtain the CuO nanowire of high aspect ratio that can use as an...
Experimental investigation for rapid thermal process (RTP) induced overlay residue was conducted. Silicon wafer substrate played a critical part in the RTP induced overlay residue. Substrates with epitaxial layers showed better overlay performance. High device densities tended to show worse overlay residue performance with same RTP process condition. Shallow trench isolation (STI) aspect ratio was...
This paper presents a silicon probe designed with three polysilicon resistance temperature detectors (RTDs) for heart temperature sensing in open-heart surgery. Via an integrated SU-8/Cu flexible ribbon cable for signal transmission to the instrument reader outside human body, the probe with a 40° tip angle can provide ∼0.9°C sensing accuracy and sustain a 4N buckling load large enough for the probe...
This paper reports a simple method to create silicon nano tips in post self-assembled monolayer (SAM)-based anisotropic wet etching. To demonstrate the fabrication feasibility, different local etch rates at stressed surfaces at hemispherical silicon specimens in surfactant-added etchants compared to those on flat silicon surfaces have been measured, which are explained as the enhanced adsorption of...
Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept to integrate multiple vertical power devices on a common die. The concept is based on the creation of vertical deep trench terminations on the periphery of the devices, thus allowing to separate the drift...
This paper reports a heated atomic force microscope cantilever having a Schottky diode fabricated near the cantilever free end and a highly conducting tip. The forward bias and reverse bias operation of this probe offer different current voltage characteristics, such that the cantilever heating and temperature sensing capabilities are different in forward bias versus reverse bias operation. The asymmetric...
In this paper, we present a novel electrical test structure for determining the thermal expansion coefficients (TECs) of micromachined polysilicon thin films. The electrothermal properties of the test structure are analyzed. The pull-in method is exploited in characterizing TECs of thin films. In addition, an analytical model and a measurement method are developed. The finite element software ANSYS...
Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the...
The capacitive structure of comb capacitive micromachined gyroscope is a kind of important structure. The mechanical properties of micro inertia sensor material had changed when the structures experienced high temperature boron diffusion, lithography and etching et.al. micromachined process. Therefore, it is necessary to measure the basic mechanical properties of boron-doped material in order to supply...
A microfabricated neural thermocouple arrays probe (NTAP) is proposed for measuring and comparing the temperature of local brain area in real time sensing. Four junctions of T type thin film thermocouple arrays were fabricated on a sharp silicon probe tip. Each junction size was 20 mum by 20 mum. The average seebeck coefficient was 15.12 muV/oC and the dynamic response time was 0.78 sec. The temperature...
A hybrid-system consisting of a scanning thermal microscope and an environmental scanning electron microscope is used to analyze directional thermal conductivity mechanisms. An electron beam stimulates locally variable hot spots, whereas a thermal probe is used as a locally resolving detector. The detected temperature oscillation strongly depends both on the local thermal conductivity and on the directivity...
Ambipolar diffusion coefficient in silicon-on-insulator is measured as functions of lattice temperature and carrier density by directly imaging the carrier dynamics by using a high resolution optical pump-probe technique based on free carrier absorption.
The effectiveness of a new offset compensation technique for integrated thermal flow meters is demonstrated. A sensor structure based on two heaters placed between two temperature probes is designed with a commercial CMOS process and fabricated by means of a post-processing technique. The power unbalance between the two heaters is used to compensate the intrinsic sensor offset. Experiments, performed...
We have measured the T1 lifetimes of Rydberg states of phosphorus and arsenic in silicon at THz frequencies using the FELIX pulsed free electron laser. Our results show the dominant decoherence mechanism is lifetime broadening.
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
A 53 dB gain limiting amplifier for OC-192 and 10 GbE applications is developed in a 50 GHz fT SiGe SOI complimentary bipolar process, and has 5 mV pk-pk sensitivity, 1.25 V pk-pk maximum input signal, 14 ps (20/80%) rise/fall times and 450 mV pk-pk output into matched differential 50 Ohm loads, consuming 430 mW on a 3.3 V supply. Input Cherry-Hooper gain stages limit the -3 dB bandwidth to 11 GHz...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.