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Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept to integrate multiple vertical power devices on a common die. The concept is based on the creation of vertical deep trench terminations on the periphery of the devices, thus allowing to separate the drift...
This paper reports a heated atomic force microscope cantilever having a Schottky diode fabricated near the cantilever free end and a highly conducting tip. The forward bias and reverse bias operation of this probe offer different current voltage characteristics, such that the cantilever heating and temperature sensing capabilities are different in forward bias versus reverse bias operation. The asymmetric...
A microfabricated neural thermocouple arrays probe (NTAP) is proposed for measuring and comparing the temperature of local brain area in real time sensing. Four junctions of T type thin film thermocouple arrays were fabricated on a sharp silicon probe tip. Each junction size was 20 mum by 20 mum. The average seebeck coefficient was 15.12 muV/oC and the dynamic response time was 0.78 sec. The temperature...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
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