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As compared to piezoelectric technology, MEMS technology employed for Capacitive Micromachined Ultrasonic Transducer (CMUT) fabrication provides increased compatibility with 3D packaging methods, enabling the possible development of advanced transducer-electronics multi-chip modules (MCM) for medical imaging applications. In this paper, an acoustically optimized 3D packaging method for the interconnection...
Semiconductor companies have developed 2.5D IC integration technology, which applies a silicon interposer with Cu through silicon vias (Cu TSVs) as a platform for interconnecting and integrating heterogeneous chips horizontally and vertically as a transition approach to 3D IC. The existing Cu TSVs might make the silicon interposers more fragile, due to structural non-homogeneity and weak interface...
The paper describes three-dimensional, dynamic finite element simulations of wire bonding processes on silicon dies, which are bonded on soft interposers by soft adhesives. The application of soft materials below a die has increased e.g. due to a reduced influence of the substrate stiffness on a sensor chip. However, a soft die bond may cause trouble during the subsequent wire bonding process, because...
The mechanical strength of the thin dies especially with copper through-silicon via (Cu-TSV), has to be determined for ensuring good yield during manufacture handling and packaging. In this study, three test methods: a line-load on elastic-foundation (LoEF) test, a 3-point bending (3PB) test and a 4-point bending (4PB) test are used for the strength determination of Cu-TSV thin memory dies. The results...
Through-silicon via (TSV) technology has been the core of the next generation of 3D integration. Although some TSV reliability issues have been addressed in some literatures, but the sidewall scallop resulted from Bosch etch process has not been thoroughly investigated. In this paper, we focus on the effects of different sidewall scallops on the interfacial stress evolution. An axi-symmetric single...
Through-silicon via (TSV) technology has been the core of the next generation of 3D integration. Although some TSV reliability issues have been addressed in some literatures, but the sidewall scallop resulted from Bosch etch process has not been thoroughly investigated. In this paper, we focus on the effects of different sidewall scallops on the interfacial stress evolution. An axi-symmetric single...
In this paper, four kinds of 3X3 TSV arrays in different forms of signals and grounds were modeled and simulated using Finite Element Method. The analysis was performed by ANSYS HFSS. The target of this research is to study the influence of TSV array pattern on signal transmission characteristic and to give a guide for the design of package level interconnect using TSV arrays. The simulation results...
Consumer electronic products are evolving toward smaller size and higher efficiency. 3D IC packaging has smaller form factor and lower signal delay compared with conventional packaging. Thus, it has been widely used in mobile electronic devices. Mobile electronic device is prone to being dropped during operation. Hence, the drop reliability of electronic packaging is an important issue in 3D ICs....
Ceramics have some outstanding features needed for pressure-tight housings of underwater devices such as higher compressive strength, lower specific gravity and high resistance against corrosion. One of promising applications is pressure-tight housings for free-fall pop-up Ocean-Bottom Seismometer (OBS) because we can develop light and hard pressure-tight housings using made of ceramics, which have...
This study assesses the reliability life of 3D chip stacking packaging developed by the Industrial Technology Research Institute (ITRI). The simulation results show that the trends of stress of through silicon via (TSV) structures with different chip stacking numbers are nearly constant during thermal stress analysis. Therefore, the simplified two-layer chip stacking model is adopted to analyze the...
Current crowding of a micro spring pressure contact under high current is studied. The spring conducts >; 250 mA electrical current between chips, has large mechanical compliance (>; 30 μm) compared to other packaging technologies, and fits in a 180 μm pitch 2d array. At 250 mA and 65°C, daisy chains of 134 spring contacts in a silicon package show stable resistances and hot spot temperature...
MEMS (Micro Electro-Mechanical System) is a technology that offers significant advantages over various microscopic elecromechanical devices. In the field of MEMS products, pressure sensor represents a considerably mature technology and has been extensively used in a variety of applications. Nevertheless, packaging is a key issue among the processes of MEMS manufacture due to the specialty and complexity...
In present study, a backside-etched silicon chip with a polysilicon diaphragm flip-chip attached on a printed wiring board (PWB) and globally bumped on a FR4 substrate was investigated based on finite element analysis (FEA) for determining three key parameters of flip chip chip size packaging (FC-CSP), namely, the size of solder bump, the thickness of PWB substrate, with/without U8437-3 underfill...
Multi-physics multi-scale modeling issues in various stages of the LED manufacturing, 3D-SiP, and nano interconnects have been discussed. Molecular dynamics (MD) and finite element method (FEM) have been used to study the scale effect of the material properties and the prediction of the module behaviors which are critical to LED fabrication. We propose a new concept to integrate multi-physics/multi-scale...
A load cell is a transducer to convert a force into an electrical signal. Compared with widely used strain gauge type load cells, silicon-based capacitive load cell cell can offer advantages such as uniform performance over material property change and stable mechanical property in harsh conditions. Here we present a capacitive type load cell with a load sensitive silicon structure and efficient fabrication...
A multi-physics multi-scale modeling platform has been developed and it has been applied to various stages of the LED manufacturing such as MOCVD reactor design, epitaxial growth based on silicon wafer, chip design and manufacturing, module packaging and assembly, and specific lamps. Discussions are also given to the ultra-scalable reactor design, material constitutive modeling, and curvature evolution...
The problem of a corner delamination in a fan-out chip scale package subjected to thermomechanical load is investigated. The fracture mechanics parameters, including the stress intensity factors, the strain energy release rate, and phase angles, for a quarter-circular corner delamination between silicon die and fan-out redistribution polyimide layer are obtained by using numerical finite element approach...
This paper reports on a new method for estimation and minimization of mechanical stress on MEMS sensor and actuator structures due to packaging processes based on flip chip technology. For studying mechanical stress a test chip with silicon membranes was fabricated. A network of piezo-resistive solid state resistors created by diffusion was used to measure the surface tension pattern between adjacent...
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