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This paper reports on a large-size CPU package for UNIX servers which employs embedded thin film capacitor layers. The substrate of this package has two thin film capacitor layers in the surface of the core layer, which has a capacitance of 25 uF in total. In order to adopt this package substrate, we confirmed the effect of the thin film capacitor layers on the package assembly process. We actually...
This paper proposes the possible physics-based model for the conductive filament (CF) at the low-resistance state (LRS) of thin SiO2 films that were formed by sputtering technique. The closed and analytical current models proposed here are examined by experimental results.
This paper presents fabrication and electrical characterization of embedded passives in organic multilayered substrates. We have designed and fabricated a test board and a functional application focusing on embedded passives. A test board with two embedded capacitor layers and one embedded resistor layer was used to evaluate capacitance and resistance performance. The functional application was used...
A fully metallic ink-jet printed passive chipless RFID tag on paper substrate is presented. The tag consists of an ultra-wide-band antenna, a microstrip transmission line with distributed shunt capacitors as information coding element which is reconfigurable by ink-jet printing process. Tapered microstrip line is employed to overcome the limitations of low conductivity and thin film thickness of ink-jet...
In this study, the high dielectric constant of the polymer/ceramic composites is used to fabricate capacitive substrates. The reliability and failure analysis of the capacitive substrate under temperature and voltage stress have been studied. The mean time to failure (MTTF) of the capacitive substrate shows a voltage exponent value dependence on applied voltage with a constant of ≃3.3 as the measurement...
A low parasitic inductance ground for SiGe power amplifiers has been realized using a deep silicon via (DSV). The inductance of the DSV is approximately one order of magnitude smaller than the thru-wafer-via (TWV) inductance of ~21 pH enabling a ground path for power amplifiers in common emitter configuration with literally no parasitic inductance. In this paper we compare two on-wafer measurement...
Modeling of MIM capacitors in high frequency RF applications depends heavily on the design of test structures. An external substrate ring is shown to be essential in capturing and modeling the inherent inductance of the MIM capacitor. Additionally, deembedding of series parasitics plays a very important role in modeling of MIM capacitors since these devices have very low series resistance. Various...
In the past few years, inkjet printing of microelectronics has been emerging as a cost effective and an environment friendly microfabrication technique. In this paper, inkjet printing of microsensors is investigated, using both resistive and capacitive strain-sensing operating devices. An inexpensive conductive polymer, poly(3,4-ethylenedioxythiophene) oxidized with poly(styrenesulfonate) (PEDOT:PSS)...
Embedded passives account for a very large part of today's electronic assemblies. This is particularly true for products such as cellular phones, camcorders, computers and several critical defense devices. Market pressures for new products with more features, smaller size and lower cost demand smaller, compact, simpler substrates. An obvious strategy is to reduce the number of surface mounted passives...
The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz.
Electrical characterization of various capacitors and resistors on PEI and PET substrates is performed. The resistive inks with various nominal sheet resistances have been used. Capacitor was made using BaTiO3 dielectric layer. The screen printing process is used to manufacture the resistors and capacitors according to the recommendations of manufacture parameters. The effects of different resistor...
In this paper, we propose a small-size boost type DC-DC converter module with the tiny embedded inductor. The proposed converter module is composed with a boost converter controller IC chip with built-in switching devices and an inductor in one package, and it needs only two capacitors as external parts. Therefore it achieved the same usability as a series regulator of buck converter. The proposed...
An on-chip buck converter with 3D chip stacking is proposed and the operation is experimentally verified. The manufactured converter achieves a maximum power efficiency of 62% for an output current of 70mA with a switching frequency of 200MHz and a 2x2mm on-chip LC output filter in 0.35mum CMOS. The use of glass epoxy interposer to increase the maximum power efficiency up to 71.3%, and the power efficiency...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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