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Significant advances in AlGaN/GaN heterostructure based technologies in the last decade, with AlGaN/GaN high electron mobility transistors (HEMTs) has led to high power performance at Gigahertz frequencies for communication, space, radar, and defense applications. The conjunction of the remarkable properties of the AlGaN/GaN heterojunction and the high thermal conductivity of the silicon carbide substrate...
The reliability of traditional T-gate AlGaN/GaN high electron mobility transistor (HEMT) fabricated by the low power fluorine plasma treatment was investigated by applying the off-state high electric field stress. The new electrical degradation phenomenon of AlGaN/GaN HEMT with low power fluorine plasma treatment is discovered. The electrical parameters show a rapid degradation in a short time, and...
The impact of AlGaN back-barrier in the DC and RF characteristics of AlGaN/GaN HEMT on SiC substrate is analyzed using Sentaurus TCAD tool. The AlGaN/GaN HEMT with AlGaN back barrier greatly reduces the effect of Drain Induced Barrier Lowering (DIBL), which is evident from the simulation results. Drift-Diffusion carrier transport model is used for device simulations. The proposed HEMT exhibits a fT...
In this paper, AlGaN/GaN HEMTs with different device dimensions were designed and fabricated to investigate the relationship between off-state breakdown voltage and gate-to-drain spacing. It is found that the off-state breakdown voltage increases almost linearly with gate-to-drain spacing with the slop of about 46.8V/gm. Sentaurus software was used to find the physical mechanism of this phenomenon...
Large signal modeling for the GaN devices are crucial for their applications. An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect is proposed in this work. To obtain accurate description of the thermal effect, the influence of the temperature on all the Angelov empirical model parameters like extrinsic resistance is studied. These parameters counting the thermal...
This paper describes breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with multi-finger gate patterns. We studied the spatial profile of electroluminescence (EL) from AlGaN/GaN HEMTs under high drain and near pinch-off gate bias. As a result, different EL emission profiles and breakdown characteristics were observed depending on the drain electrode pattern of the devices.
The vertical leakage current of AlGaN/GaN high-electron-mobility transistors on Si substrates was studied. The effects of the Al content in the AlGaN buffer layer and pit density on the vertical leakage current were not as significant as the effect of the initial AlN layer's crystal quality.
AlGaN/GaN technology provides a lot of power density, which causes a thermal effect and degrades the whole electronic characteristics of the component. The local heating source appears when the component is biased. Moreover, radar applications work in pulsed rate and emphasize the impact of this source. So it is important to measure the temperature in transient mode, close to this local source as...
This paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼ 1100V. Temperature characterization of Capacitance voltage characteristics...
This paper describes significantly suppressed current collapse in AlGaN/GaN HEMTs with a 3-dimensional field plate (3DFP) structure. 3DFP consists of a gate field plate deposited on a passivated SiN film and equally-spaced multiple grooves formed by dry-etching of AlGaN/GaN layers, and hence the effective field plate area has been efficiently increased. Optimizing the groove spacing of 3DFP, the device...
This paper describes electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with a GaN cap layer. The maximum drain current was kept constant at around 0.4 A/mm for a GaN cap layer thickness up to 5 nm. It was found that the degree of current collapse was gradually improved when the GaN cap thickness was increased from 0 (without cap) to 10 nm.
In this paper, a novel back gated AlGaN/GaN High Electron Mobility Transistor (HEMT) structure is proposed for detection of biological molecules such as nucleic acids (DNAs, RNAs). The proposed device consists of a thin film layer of AlGaN on top of a GaN thin film layer grown on a substrate such as sapphire or silicon, wherein the substrate is completely back etched exposing the GaN surface for attachment...
This work compares the DC and RF performance for Single Gate(SG) field plated AlGaN/GaN High Electron Mobility Transistor (HEMT) with a Dual Gate(DG) field plated High Electron Mobility Transistor. The maximum drain current obtained for AlGaN/GaN DG field plated HEMT is 1057mA/mm at Vgs=0V and Vds=10V, which is of 396mA/mm for AlGaN/GaN SG field plated HEMT. The maximum transconductance for Dual-Gate...
AlGaN/GaN technology is attractive for its application to power amplifier. With the deepening of the research, noise performance of GaN device has also won acceptance. Compared with GaAs LNA, GaN LNA has a unique superiority on power handling. In this paper, a GaN Ku-band low noise amplifier is designed. A noise figure of 2.4dB at 16GHz and a gain of 18dB in the band of 14–18GHz are obtained at a...
We have examined the response of AlGaN/GaN power switching HEMTs to electrical bias stress. Three different gate stack structures were studied. In devices containing a ~ 5 nm thick AlGaN layer in the gate stack, both positive and negative shifts in the threshold voltage were observed following high blocking voltage stress, consistent with a short initial period of electron trapping followed by a longer...
This paper presents for the first time Arc shaped gate and arc shaped stacked gate dielectric with cap layer Nanoscale AlGaN/ GaN High Electron Mobility Transistor for realization of normally-off HEMT with reduced gate leakage current. An excellent high drain current of 1.182×10−3 A/um at 0.881 threshold voltage along with satisfactory ION/IOFF current ratio of 8.62×107 is obtained.
A GaN power amplifier which can be applied to Ka-band is simulated and studied in the paper. Based on typical AlGaN/GaN HEMT (high electron mobility transistor) pattern, the transistor model is set up by the Silvaco TCAD. The on-chip spiral inductor and metal-insulator-metal (MIM) capacitance are also simulated in HFSS respectively. Extracted from the modal above, s-parameters are used to design a...
Wide bandgap GaN technology has emerged as a major actor among technologies devoted to high frequency, high power applications. However, GaN based transistors are still largely sensitive to damaging effects induced by interface or surface charges, generally assigned to charge processes induced by spontaneous and piezoelectric effects. This paper presents recent works in the field of reliability on...
In this paper we present a compact model for AlxGa1−xN/GaN High Electron Mobility Transistors (HEMTs) developed for circuit simulation of power transistors. A physical approach is followed and drain current and intrinsic node charges are calculated using the surface-potential formalism. The HSP model (acronym for HEMT Surface-Potential model) presented here includes: dependence on the aluminum content...
AlGaN/GaN high electron mobility transistor (HEMT) has many attractive material properties, which make it suitable for power electronic applications. This paper described the development of packaging for high-power AlGaN/GaN high electron mobility transistors (HEMTs) on a silicon substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. The proposed packaging structure...
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