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In this paper, the leakage path and breakdown behavior of GaN on silicon substrate were studied systematically. Three terminal breakdown voltage characteristics of the samples with various ohmic contacts spacing were evaluated. With increasing the spacing between the contacts, the breakdown voltage increased linearly first and then saturated. In order to clarify the breakdown behavior, leakage path...
The fundamental possibility of the MBE GaN nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting system have been studied and compared properties of GaN nanowires on silicon substrate.
AlGaN/GaN based double heterosturcture high electron mobility transistor (HEMT) structures were grown on GaN buffer/Si(111) substrate by plasma assisted molecular beam epitaxy (PAMBE) technique. The thickness of GaN buffer layer was varied to find out the optimum GaN buffer layer for a crack free heterostructure, exhibiting appreciable structural and optical results. Full width at half maximum (FWHM)...
The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct...
A (GaN/AlN) alternating-source-feeding (ASF) buffer layer was introduced in the molecular beam epitaxy (MBE) growth of GaN film on (111) Si substrate. Residual strain in the GaN film was reduced by using the ASF buffer layer.
AlN is generally used as buffer layer for the epitaxial growth of GaN on Si(111) substrate. In this paper , we wok on the AlN buffer layer and investigated the crystal quality the doped and undoped Si. Compared with the sample without Si doped, AlN:Si could improve the GaN layer crystal quality. Whereas, the coefficient of doped Si could be found. With suitable the coefficient, crack-free 2.0μm GaN...
Moore's Law states that the number of transistors on a chip will double about every two years. As transistors are scaled down to nanometers, the theory and structure of nanometers devices such as carbon nanotubes field effect transistors (CNTFET) are being extensively studied. CNTFETs, offers high mobility due to ballistic transport, high carrier velocity for faster switching, reduced chip area and...
This contribution reports on properties and characterization of InAlN/GaN structures prepared by metal organic chemical vapour deposition (MOCVD) using secondary ion mass spectroscopy (SIMS). The SIMS revealed the vertical cross section of the InAlN/GaN sample structures on SiC substrate and also visualizes the different growth procedure results. The SIMS comparison of the structures shows the Al,...
AlGaN/GaN high electron mobility transistors (HEMTs) were grown on Si substrates by MOCVD. In the HEMT structure, the 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage current. Afterwards, an AlN spacer layer was inserted between the AlGaN barrier layer and the GaN channel layer to effectively reduce impurity scattering and...
In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA=3D 5.9 mΩcm2 and Vb=3D...
The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure and morphology of YSZ buffer...
In this paper, we successfully demonstrate a recessed gate normally-off GaN FET on a silicon substrate with high threshold voltage (Vth) uniformity and low on-resistance. In order to realize high Vth uniformity, a novel Vth control technique is proposed, which we call ??piezo neutralization technique??. This technique includes a piezo neutralization (PNT) layer formed at the bottom of the gate recess...
The paper presents a molecular beam epitaxial (MBE) grown buffer for nitride HEMT. The samples were grown at the same thermocouple temperature of 660??C. GaN buffer layer was directly grown on the GaN template. In the secondary ion mass spectrometry (SIMS) measurements, unexpected silicon and oxygen impurity atoms at the template surface that caused the buffer leakage were identified.
In this paper, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the breakdown voltage was improved to be over 2.45 kV using high-resistive carbon doped buffer layers with a larger thickness of over 7.3 mum. The maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance...
Tandem solar cells using InxGa1-xN heterojunctions with silicon as the active junction were fabricated using gas-source molecular beam epitaxy (MBE) and by a novel deposition method incorporating an energetic nitrogen atom source. N-type InGaN layers were grown on p-Si(111) to evaluate predicted low-resistance tunnel junction properties. Ohmic behavior was observed, showing that these junctions can...
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