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This work reports the performance of combined a-Si solar PV/T (Photovoltaic/Thermal) system that working with Bio-diesel distillation process. Electricity produced from a-Si PV modules was supplied for electrical equipments such as circulation propellers and circulation pumps of distillation system.
QuantaSol Ltd is commercialising the quantum well solar cell for terrestrial concentrator applications. Here, encouraging results of the first pre-pilot production of single junction GaAs-based cells are shown, and an update given on the status of the company and its products.
The Solar America Initiative (SAI) PV Technology Incubator Program, funded by the Department of Energy (DOE), through the National Renewable Energy Laboratory (NREL), has the objective of shortening the timeline for companies to transition prototype and precommercial PV modules into pilot and full-scale manufacture. Entrance opportunities for the Incubator project are anticipated every 9 – 12 months...
A large batch PECVD system has been developed in order to deposit a-Si/a-SiGe and a-Si/μc-Si solar cell on 20 pieces of SnO2-coated glass with the area of 0.8 m2. Newly designed electrode has been used in order to achieve uniform μc-Si film on 0.8 m2. Beside μc-Si nlayer, p(μc-SiO) has been used in the p-layer of the bottom cell in order to increase the module performance. Alcohol flush has been used...
Quartz Crystal Microbalance (QCM) was applied to chemical bath deposition (CBD) process to improve the controllability of the CdS deposition and to get more reproducible results. The frequency change measured by QCM during CdS deposition process was turned out to have linear relationship with thickness of the CdS thin films, while the traditional process parameters, i.e, deposition time and temperature,...
Amorphous mixed metal oxide TCOs are of increasing interest due to the excellent opto-electronic properties and smoothness (RRMS ≪ 0.5 nm) obtained for sputtered films deposited at less than 100 °C. In particular, for amorphous In-Zn-O (a-IZO) films grown from a ceramic target with 10 wt. % ZnO in In2O3, the current industry standard, conductivities σ ≥ 2500 S/cm are common. Here, we have investigated...
We have prepared cell with a variable thickness of CdS layer to get an understanding of the optimum thickness as well as it lowest limits for practical purposes. We used quantum efficiency current-voltage and light beam induce current testing to investigate cell performance as well as nonuniformity. The best results are achieved with 0.1 micron CdS layer. This number does depend slightly on the quality...
Mg-doping and n+-p junction formation of MOVPE-grown InxGa1-xN (x∼0.4) have been studied. InGaN films with an In content up to 0.37 are successfully grown without both phase separation and metallic In segregation. By doing with Mg using CP2Mg, InGaN films with an In content up to 0.23 show p-type conduction with a net acceptor concentration around 5 x1016 cm−3. The sample with an In content 0.37 shows...
Zinc oxide thin film has been deposited on glass substrate by electron beam evaporation with argon plasma assistance. Undoped polycrystalline ZnO pellets (purity = 99%) were used as source material. The film was characterized by atomic force microscopy, UV/VIS/NIR spectroscopy, electrical resistivity and Hall effect measurements and X-ray diffraction. The thicknesses were measured using a Dektak profilometer...
The behavior of CdS/CdTe devices with very little Cu in the back-contact was investigated. Though the devices maintain decent voltage (Voc ∼760–780 mV), the fill factor suffers (FF ∼ 45–50%) due to a secondary curvature in the power quadrant of the J-V plane. Capacitance results indicate full depletion, and laser-beam-induced-photocurrent mapping indicates spatial QE variations of several percent...
Using direct-write approaches in photovoltaics for metallization and contact formation can significantly reduce the cost per watt of producing photovoltaic devices. Inks have been developed for various materials, such as Ag, Cu, Ni and Al, which can be used to inkjet print metallizations for various kinds of photovoltaic devices. Use of these inks results in metallization with resistivities close...
ZnO, SnO2, Indium-tin oxide (ITO) nanostructures have been produced on glass substrates coated with a transparent conducting oxide (TCO) electrode for application in dye sensitized solar cells (DSC). Quasi one-dimensional (1D) nanostructures of different TCOs have been synthesized using the vapour transport-and-condensation technique. Nanostructures with different shape and aspect-ratio can be obtained...
Due to the sun's intermittent nature, there must be energy storage on a large scale in order for solar energy to provide society's energy needs. One way to store this energy would be producing hydrogen through an electrochemical reaction. It has long been known that ultrasonic irradiation has positive effects in electrochemistry. However, the exact mechanisms that produce these effects are unknown...
EQE measurements were performed on thin-film poly-Si solar cells fabricated by the solid phase crystallisation method of PECVD a-Si:H (PLASMA cells). PC1D simulation showed that a SiO2/aluminium rear reflector is superior to an aluminium reflector. A promising Jsc.EQE value of 23 mA/cm2 has been obtained for a 3 microns thick PLASMA poly-Si solar cell on Aluminium-Induced Texture (AIT) textured glass...
We propose a novel production method to fabricate high-efficiency thin-film poly-Si solar cells using flash lamp annealing (FLA) for crystallization of micrometer-order-thick p-i-n amorphous silicon (a-Si) structure, prepared by catalytic chemical vapor deposition (Cat-CVD, Hot-Wire CVD) on low-temperature glass substrates and following high-pressure water vapor annealing for defect passivation. The...
III–V semiconductor based quantum structures displaying quasi-3D holes and resonant tunneling alignment at the conduction band incorporated in the intrinsic region of p-i-n GaAs solar cells are investigated. The choices of the material system and energy band design are tuned towards facilitating the collection of all photo-generated carriers while minimizing recombination losses. Ultra-fast carrier...
Impedance Spectroscopy Technique (IST) has been employed for the average space charge potential and resistivity measurement at grain boundaries (GBs) in multi-crystalline silicon wafer's. It is found that IST is the most simple and accurate way to obtain space charge potentials developed at grain boundaries in semiconductor devices. In this work the individual and average grain GB measurement is carried...
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