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The following topics are dealt with: quantum dot arrays; Gunn diodes; photodiodes; pHEMT; SOI MOSFET technology; HEMT transistor; power electronics; millimeter microwave power applications; organic thin film transistors; RF sputtering; ion implantation; FEM simulations; trap assisted band-to-band tunnelling; EMG measurement; wireless sensor system; high voltage superjunction power MOSFET; sensors;...
This paper presents an overview of the technological challenges facing the future scaling of device dimensions needed to meet the performance scaling in accordance with Moore's law. A number of performance boosters have to be introduced in order to keep up with the expected performance gain in each new technology node. The introduction of strain engineering is an important feature as well as the implementation...
The fabrication process of single-photon detectors (SPD) based on high-density arrays of Ge quantum dots (QD) is proposed. The design of the SPD exploits the phenomenon that the contribution of an individual QD to the hopping transport through this high-density Ge QDs array crucially depends on the occupation of the dot with carriers. A change in the conductance of the array can be induced by changing...
We propose simple analytical model for calculation of spatial distribution of the sheet electron density in the channel of high-electron mobility transistor (HEMT) periodically modulated by the bias voltage applied to grid-grating gate. The contribution of ungated regions of two-dimensional electron gas (2DEG) channel is taken into account. The developed model allows to evaluate resonant frequencies...
A new all ternary In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As double heterojunction bipolar transistor (DHBT) showing complete elimination of current blocking has been grown using solid source molecular beam epitaxy (MBE). The development of the DHBT required careful epitaxial design trade-offs which culminated in an optimum structure achieving ground breaking RF performance in excess of 100 GHz...
We present light emitting diode with two-dimensional photonic crystal structure prepared by interference lithography in the light emitting diode surface with an emission maximum at 845 nm. Applied two-dimensional photonic crystal structure improved light extraction efficiency for more than 30 %. The photonic crystal light emitting diode surface morphology was analyzed by atomic force microscope. The...
In this paper, we present the noise measurement results of InAs/AlSb HEMTs at room temperature under very low drain bias (100mV) at 30GHz. Under these dc bias conditions the transistor exhibit NFmin=1.56 dB and Gass=5.3dB @30 GHz for Pdc= 7.3μW/μm. These results are compared to our previous work and the great improvements observed open up the possibility to develop a 100mV electronics at room temperature.
An advanced step-graded Gunn diode (~ 100 GHz fundamental frequency) has been developed using a joint modelling-experimental approach to test GaAs based Gunn oscillators at sub-millimetre wavelengths. These devices are to be used as high power (multi-mW) Terahertz sources in conjunction with multipliers using Schottky diodes as the non-linear elements. The modelled-measured results of low series resistance...
The improvement in output conductance of a 45 nm Partially Depleted (PD) SOI MOSFET with diamond-shaped body contact (DSBC) is shown. The results of 3-D simulations of current drive and body potential for the conventional and DSBC devices demonstrate suppression of floating body effects. DSBC device was compared with conventional body contacted structure and a reduction of small-signal output conductance...
Photodiodes based on ZnO/Si heterostructures were fabricated by sputter deposition of polycrystalline n-ZnO films on p-Si substrates. CdTe and CdSe/ZnS nanoparticles were embedded at the junction in between Si substrate and ZnO thin films. The effect of nanoparticles embedding on electrical and optical properties of ZnO/Si photodiodes has been studied. I-V and photocurrent spectra measurements revealed...
This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement...
A new width-dependent nonlinear relation to obtain body voltage (VB) in PD SOI MOSFET is presented. The new model is extracted based on the distributed nature of the body resistance (RB). Using 3-D simulations of an H-gate 45 nm PD SOI MOSFET, the body voltage variations along the device width were obtained. It was shown that the nonlinear relation approximates the 3-D simulation results. The proposed...
The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different AlxGa1-xN/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.
This paper deals with measuring and analyzing input and output low-frequency noise spectra of Gallium Nitride (GaN) based High Electron Mobility Transistors. Low-frequency noise spectral densities of drain noise voltage and gate noise current are shown. The three different measurements of input low-frequency noise of GaN HEMT transistor were measured for better revealing G-R noise sources in gate...
New construction of the AlGaN/GaN/semi-insulating Schottky diode was proposed for operation at gigahertz regime. Based on the performed numerical simulations the planar diode with inter-digitated lay out was elaborated. The test structures of the diode was fabricated in AlGaN/GaN heterostructures grown on a c-plane sapphire by MOVPE technique. The d.c. and high frequency characteristics of the device...
ZnO nanorods were grown on SiO2 substrates using a two-step process. In the first step, the formation of seed layers was performed. In the second step, the growth of nanorods above the seeds was carried out via three different methods. The used methods were magnetron sputtering and two types of hydrothermal methods. The obtained nanomaterial was characterized by scanning electron microscopy and X-ray...
Microwave assisted reactive sputtering was applied to obtain homogeneous and high optical quality ITO thin films with thickness of 50, 100, 200 and 280 nm. Electrical properties of deposited ITO thin films were measured using standard four-point probe method together with transmission spectra of ITO thin films in the wavelength range from 330 nm to 880 nm. The figure of merit calculated for all samples...
In this work thermoelectrical properties of TiO2:(Co, Pd) and TiO2:Nb thin films have been described. Thin films were performed by high energy magnetron sputtering method. Sputtering process was carried out from mosaic targets under low pressure of oxygen reactive gas. Electrical and thermoelectrical properties of as deposited and annealed at 800 K thin films were analyzed based on resistivity and...
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