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AlN is generally used as buffer layer for the epitaxial growth of GaN on Si(111) substrate. In this paper , we wok on the AlN buffer layer and investigated the crystal quality the doped and undoped Si. Compared with the sample without Si doped, AlN:Si could improve the GaN layer crystal quality. Whereas, the coefficient of doped Si could be found. With suitable the coefficient, crack-free 2.0μm GaN...
Growth of GaN on silicon is investigated to realize semiconductor device on silicon substrate. Our experiment's emphasis is focused on different of structure of interlayer on Si(111) substrate to growth high quality GaN layer. For the large mismatch coefficient between of Si and GaN, which result in the crake and defect. By investigating the different structure, we can draw a conclusion on what kind...
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