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Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).
There has been a great discussion about electro-migration behavior in semiconductor area. And it has been often discussed that electro-migration behavior of the flip chip package using Sn-Ag bump. However, little study has been done to explore the electro-migration behavior of low temperature solder such as a Sn-Bi solder. In this report, we investigated electro-migration behaviors of micro pillar...
Packaging technology is currently transitioning from flip chip technology toward three-dimensional integrated circuits (3D IC) packaging. In 3D ICs, smaller dimensions of the microbumps, approximately 10 µm, are adopted. In such small size of the microbumps, the current densities applied in the microbumps will dramatically increase. Furthermore, due to intense joule heating and current crowding, current...
Electromigration (EM) has been conducted on lead-free solder balls in wafer-level packages for different redistribution layer (RDL) thicknesses, under bump metallurgy (UBM) schemes, and lead-free solder alloys. Two different types of EM-induced voids were observed at the electron-source side: pancake void between the solder/RDL interface and through-thickness voids in the RDL. In both cases, voids...
In this report, we investigated electro-migration behavior of two types of low temperature bonding. One was Sn-57 Bi using conventional C4 process. The other was Au-In Transient Liquid Phase bonding (TLP). Electron flow to induce the electro-migration was from substrate side (Ni pad) to chip side (Cu post) with current density of 40000A/cm2 at 150 degree C. In the case of Sn-57 Bi conventional C4...
The Cu/Sn3.0Ag0.5Cu/Ni (Cu/SAC305/Ni) solder joints were designed to investigate the Cu, Ni atoms diffusion behavior and the interfacial reaction during electromigration (EM) at 180 °C under a current density of 1.0×104 A/cm2. For comparison, the Cu/Sn3.0Ag0.5Cu/Ni solder joints were aged at 180 °C for the same durations. In as-soldered state, the (Cu0.55Ni0.45)6Sn5 and (Cu0.92Ni0.08)6Sn5 IMCs formed...
A demand for small form factor in IC packaging has lead to a reduced bump size and an increased current density. The high current density accompanying with Joule heat induces an electromigration failure. In this study, we investigated the effects of under bump metallization (UBM) on the electromigration failure. Three types of UBM such as Cu 5 μm, Cu 10 μm and Cu 5 μm/Ni 2μm were compared with 60...
The line-type Cu/Sn/Ni interconnects were used to determine the effect of electromigration (EM) on the Cu-Ni cross-interaction under the current density of 1.0×104 A/cm2 at 150 °C for 100 h and 200 h. For the purpose of comparison, the line-type Cu/Sn/Ni interconnects were also aged at 150 °C for 100 h and 200 h. After soldering, Ni3Sn4 and Cu6Sn5 IMCs formed at the Sn/Ni and Sn/Cu interfaces, respectively...
The effect of electromigration (EM) on the solid state interfacial reactions in line-type Cu/Sn/ENIG interconnect was investigated under the current density of 5.0×103 A/cm2 at 150 °C for 100 h and 200 h. The Cu/Sn/ENIG specimens were also aged at the same temperature and durations for comparison. After soldering, Cu6Sn5 and Ni3Sn4 IMCs formed at the Cu/Sn and ENIG/Sn interfaces, respectively. During...
In this study, the line-type Cu/Sn/Cu and Cu/Sn/Ni interconnects were used to determine the growth kinetics of interfacial intermetallic compounds (IMCs) under electromigration (EM), and the current crowding effect and thermomigration are expected to be avoided in this line-type interconnects because of their symmetric structure. The Cu/Sn/Cu interconnect was under the current density of 5.0×103 A/cm...
Electromigration (EM) of micro bumps of 50 mum pitch was studied using four-point Kelvin structure. Two kinds of bumps, i. e., SnAg solder bump and Cu post with SnAg solder were tested. These bumps with thick Cu under bump metallization (UBM) were bonded with electroless Ni/Au (ENIG) pads. The results showed different EM features comparing with larger flip chip joints. Under various test temperatures...
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