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As a natural result of the continual growth and progress in soft robotics to establish fully compliant bodies primarily made of soft materials using additive manufacturing techniques, there are also increasing efforts towards realizing flexible and stretchable sensors which can seamlessly be embedded in soft robotic devices. In this study, we report on the performance evaluation of two soft strain...
A wafer-level fabrication process of polydimethylsiloxane (PDMS) membranes with integrated strain gauges for low-pressure sensing is developed. The device is proposed as an alternative approach and a first step towards a high-throughput platform to electrically monitor the contractility of heart cells on a silicon chip. Titanium strain gauges are successfully integrated on a 12 μm-thick PDMS membrane...
The strain induced by substitutional arsenic into the silicon lattice was investigated experimentally. First, a combination of multiple implantations was used to obtain a flat arsenic profile in the first 150 nm of the substrate. Although a full activation of the dopants could be achieved, the EOR defects resulting from the implants were not dissolved and prevented reliable strain measurements. A...
This paper reports the fabrication and testing of gold passivated mechanically flexible interconnects (MFIs) with elastic deformation of 65 μm. It is shown that the gold passivation plays a critical role in preserving the lifetime of the flexible interconnects. The gold-passivated MFIs exhibit an unchanged force-displacement characteristic after being vertically indented 100 cycles.
With increasing importance of 3D packaging systems, more and more dies will be stacked on top of each other and connected using through silicon vias (TSVs) and solder bumps. In-situ stress measurements near these bump pads are important to help understand the evolution of die stresses associated with the packaging process. Unlike piezoresistive doped Si sensors that require high-temperature processing,...
The paper presents the design, fabrication and experimental results of a liquid crystal polymer (LCP) membrane-based pressure sensor array for underwater sensing applications. An artificial lateral-line has been developed, mimicking the features of the functions of the superficial neuromast in a fish. A simple, low cost and robust sensor has been proposed for harsh underwater environment applications...
This paper reports gamma irradiation effects on the resistance of polycrystalline silicon beams in MEMS. Co60 irradiation test was performed to reveal mechanisms underlying radiation effects. Changes of the resistances have been measured by Semiconductor Characterization Instruments. The mechanisms of gamma irradiation effects on the resistance of polycrystalline silicon were discussed in detail....
Structured and vertically aligned carbon nanotubes (CNTs) are investigated for their applicability as strain gauges. The CNTs are grown onto an oxidized Si substrate, passivated by a polymer and transferred to a flexible film. This sensor material has a high gauge factor up to 11.5 but also a negative temperature dependence of resistance (TCR with αCNT = -500 ppm/K). For TCR compensation,...
This paper explores the challenges facing the 22nm process generation and beyond. CMOS transistor architectures such as ultra-thin body, FinFET, and nanowire will be compared and contrasted. Mobility enhancements such as channel stress, alternative orientations, and exotic materials will be explored. Resistance challenges will be reviewed in relation to key process techniques such as silicidation,...
In this paper, the problem of strain was discussed, which comes from the process of eliminating the bow by cooling. During this process, the deformation was analyzed by measuring strains at different places of a solar cell. At last, some phenomena were got by comparing strain caused by cooling and heating respectively.
A single-walled carbon-nanotube-array-based (SWCNT) strain sensor was proposed and its fabrication technique was presented, which afforded more simple process than individual SWCNT-based sensor. A novel selective treatment of strain-based electrical breakdown was utilized to leave the SGS-SWCNTs with high gauge factor in the array. The SWCNT-array strain sensor were used for weighing experiment and...
This paper reports a room-temperature fabrication process for production of localized regions of highly-loaded carbon nanotube (CNT) networks within the surface layers of polydimethylsiloxane (PDMS). These bilayer micro-structures are formed by electrophoretic deposition (EPD) of CNTs into a patterned mold, followed by a transfer-micromolding step. The fabricated CNTs/PDMS bilayer exhibits flexibility,...
Control of reliability is a major economic and technical challenge for power electronics. Today, models can be used to predict failure, but to be accurate this models should be updated continuously by the real mechanical state of the device. A possible solution is to make use of the silicon piezoresistive properties of MOS gated power devices (LDMOS, VDMOS, ...) and to take advantage, without increasing...
This paper reports on the extension of the wafer-scale microtensile technique to the piezoresistive characterization of thin-films, demonstrated for in-situ n-doped poly-Si layers. In addition to the reliable extraction of mechanical properties, this extended high-throughput method enables the acquisition of linear and, for the first time, nonlinear piezoresistive coefficients, namely the first and...
Both n- and p-type nano-thick piezoresistors are fabricated on SOI (silicon on insulator) wafers using micro-fabrication processes. Giant piezoresistance is measured and theoretically explained for nano-thick silicon resistors. Compared to bulk silicon, one order of magnitude higher piezoresistive coefficients are, for the first time, tested with 13 nm-thick n-type and 9 nm p-type samples. Surpassing...
Flip chip technology is now being introduced in PoP(Package on Package) packages for the digital consumer electronics such as digital still cameras and mobile phones. PoP reduces the component height and improves the electrical performance. A MPS-C2(Metal Post Solder Chip Connection) method was developed for ultrafine pitch flip chip interconnections in mobile applications. A bare die with Sn/Ag-solder-capped...
We have successfully fabricated uniaxially strained SOI FinFETs with high electron mobility and low parasitic resistance. The electron mobility on (110) sidewall surfaces was found to surpass the (100) universal mobility by the subband engineering through uniaxial tensile strain along <110>. Thanks to this high electron mobility enhancement and the relatively low parasitic resistance, high I...
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (VTH) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable VTH. This ability can be exploited to design SRAMs cells with increased stability and surface density compared to planar technology...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
The simple phenomenological model of nanoscale piezoresistor is suggested. An analytical description of the influence of shear strains caused by existing the free borders of piezoresistor, on normal strains epsiv1 and epsiv2 is given. It allows to interpret correctly the experimental data. It is shown that under the decreasing the cross-section of p-type nanoscale piezoresistor less than 4000 nm2...
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