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Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D...
Various low temperature technologies compete for a foothold. It is too early to decide which ones will win. Vacuumfree technologies have a huge potential
The unique characteristics of novel technological platforms, using different substrates, such as SiC, GaN, plastic, and introducing thin film processing of non-conventional materials, e.g. polymers or small organic molecules, offer the promise of widespread application in several areas, ranging from light and robust displays, to low cost photovoltaics, or to flexible radio-frequency identification...
Applied materials played a pivotal role in the commercial acceptance of rapid thermal processing (RTP) within the semiconductor industry, largely by solving the problem of precisely measuring and controlling the temperature of silicon. Today, our RTP-based products are used for processes as varied as radical oxidation, gate oxide engineering, metal silicide annealing, and ultra shallow junction annealing...
We have extensively studied stress enhancing techniques to increase channel mobility starting at the 130 nm technology node and continued this towards the 45 nm node. Stressed overlayers and spacer materials, strained SOI substrates, embedded SiGe and SiC layers and their proximity effects, the impact of different silicides, stress memorization and compatibility with laser and flash anneals have been...
Minimization of dopant diffusion during electrical activation is a crucial issue in developing sub-50 nm silicon technology. Excimer laser annealing (ELA) in the melting regime is capable of meeting the requirements on shallow junctions in terms of depth, doping concentration and abruptness. However, in order to be successfully employed it has to be demonstrated that ELA can be integrated in a device...
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