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Minimization of dopant diffusion during electrical activation is a crucial issue in developing sub-50 nm silicon technology. Excimer laser annealing (ELA) in the melting regime is capable of meeting the requirements on shallow junctions in terms of depth, doping concentration and abruptness. However, in order to be successfully employed it has to be demonstrated that ELA can be integrated in a device...
The redistribution during annealing of low-energy B implants in SOI structures and in bulk Si have been investigated by comparing Secondary Ion Mass Spectrometry (SIMS) and simulated profiles. Samples preamorphised with Ge at different implantation energies have been prepared in order to investigate the effects of the damage position on B diffusion. The specimens have been subsequently B implanted...
In this work we demonstrate that He co-implantation can be a powerful tool to control B diffusion in crystalline silicon (c-Si). In particular, the He induced damage leads to the formation of a distribution of nanovoids near the surface that locally suppress the amount of self-interstitials (Is) generated by further B implantation. Thus, B diffusion is reduced and the B implanted profile assumes a...
The discrete IGBT (Insulated Gate Bipolar Transistor) is the most important power semiconductor device for power conversion and control in the medium power range with voltages >400 V. Next generation IGBTs require low thermal budget p-n junction formation for the back side field stop and emitter layer. The requirement for the limited thermal budget is due to the fact that the front side metallization...
Laser annealing can be used for applications that require confinement of heat on the top surface in order to preserve the integrity of buried structures. To confine heat near the silicon surface, the most appropriate tool is UV laser. Here, two excimer lasers with different characteristics were used to anneal boron in silicon. The first one has pulse duration of about 180 ns and the second one of...
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