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Off stage power dissipation and profitability are posing fundamental and practical challenges to the scaling of Si CMOS to its limit. With escalating developmental cost, off state leakage current related power dominates the CMOS heat dissipation problem making the necessity of reducing the gate leakage current density to zero, so that the designer will get relief to focus on other imposing challenges...
For the 32 nm node, using msec only dopant activation techniques reveal the potential for serious device variation caused by both single wafer high current implanter design and msec annealing micro-uniformity variation effects. New non-contact metrology techniques with <1mm detection resolution such as RsL (electrical Rs and leakage) and TW (thermal wave dose and damage detection) are required...
In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250degC by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film, without any H-related...
We report, for the first time, a detailed study of the 100 mum-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the...
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