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The unique characteristics of novel technological platforms, using different substrates, such as SiC, GaN, plastic, and introducing thin film processing of non-conventional materials, e.g. polymers or small organic molecules, offer the promise of widespread application in several areas, ranging from light and robust displays, to low cost photovoltaics, or to flexible radio-frequency identification...
There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boron-implanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond...
Microwave processing of semiconductors offers distinct advantages over conventional RTP systems in some applications. The energy contained in the microwave field can be dissipated directly into the semiconductor substrate, without the convection and conduction associated with conventional processing. In this work we describe the preliminary results of microwave annealing of heavily doped silicon layers...
Spike anneals based on radiation and conduction heating are carried out on silicon wafers with 12xl2mm2 patterned areas; these areas are covered with trenches with varying dimensions, thermally isolated from each other by large unpatterned silicon areas. The width of the trenches varies from 150-4500nm; the depths are 400 and 800nm. It is found that lamp-based heating with heatrup rates varying from...
In this work concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and re-growth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy super-saturation after the laser process The dependence on the pulse energy and number...
We investigated the activation of B in Si by a millisecond annealing process performed by infrared laser annealing. Reference samples were annealed in a lamp based rapid thermal annealing system at 200degC/s. We found that comparable diffusion length (~25 nm), the laser annealed samples show a Rs ~430 Omegasquare, corresponding to an active dose a factor two higher relative to lamp annealed samples...
In this work we present a new low-temperature poly-silicon (LTPS) TFTs fabrication process, based on excimer laser annealing, on polyimide (PI) substrate. The PI is spun on Si-wafer, used as rigid carrier, thus overcoming difficulties in handling flexible freestanding plastic substrates, eliminating the problem of plastic shrinkage with high temperature processing and allowing the use of standard...
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