The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Reduced-pressure chemical-vapor-depositions (RPCVD) of arsenic and phosphorus monolayers on silicon are investigated as a damage-free source of ultra-shallow dopant diffusion when encapsulated under a deposited oxide. The encapsulation enhances the diffusion into the Si as compared to doping from the gaseous phase, which is confirmed by sheet-resistance measurements and current-voltage characterization...
For the 32 nm node, using msec only dopant activation techniques reveal the potential for serious device variation caused by both single wafer high current implanter design and msec annealing micro-uniformity variation effects. New non-contact metrology techniques with <1mm detection resolution such as RsL (electrical Rs and leakage) and TW (thermal wave dose and damage detection) are required...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.