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When transistor noise characterization becomes a difficult task at millimeter wave range, the accuracy on the resulting noise parameters is not or poorly discussed. Within this context, this paper aims to present a methodology to estimate the uncertainties related to the extraction of the four noise parameters when using in situ tuner techniques, in the 130–170 GHz frequency range. B9MW SiGe HBT from...
Today, measurement of 65nm CMOS and 130nm-based SiGe HBTs technologies demonstrate both fT (current gain cut-off frequency) and fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100nm III-V HEMT. This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In...
In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110...
This paper focuses on small signal and noise performances of Si/SiGe:C heterojunction bipolar transistors (HBT) under cryogenic temperatures. Two different technologies featuring state-of-the-art cutoff frequencies respectively for fT and fMAX are investigated. State-of-the-art minimum noise figures are reported both at room and cryogenic temperatures. A T small signal equivalent model to which is...
In this paper, for the first time, silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This tuner is directly integrated in on-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60...
In this paper, for the first time, Silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated in On-wafer tested transistor test structure. The achieved proximity between device under test (DUT) and the developed Tuner allows better impedances...
This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak fT values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.
In this paper we review a bit more than 10 years of SiGe BiCMOS technology development and present the best results published to date by the main contenders in the field. Next, with the support of recent results obtained at STMicroelectronics, we discuss the process optimization that led to further increase in the device operating speed. Finally, we present the characteristics of a 260GHz fT, 340GHz...
AlxIn1-XP/GaAs0.51Sb0.49 DHBTs with various aluminum contents have been grown by MBE. This was motivated by the poor current gain of the InP/GaAsSb structure. From x = 0.00 to 0.30 the best result is obtained with x = 0.25 with a current gain around 6 times higher.
Selective wet etching of Ga0.5In0.5Sb on Al0.55In0.45Sb and Al0.55In0.45Sb on Ga0.5In0.5Sb were demonstrated using tartaric acid and hydrochloric acid based solutions, respectively. Controllable etch rates in the range 400-1000 Aring/min resulting in smooth surfaces and selectivities of >10 suitable for use in HBT processing were achieved. By calculating the activation energies, we also determined...
This paper describes the integration of high-voltage HBTs in a high-speed SiGe BiCMOS technology. HBTs with BVCEO from 2 V to 5 V featuring an all-implanted collector and fully compatible with a 230-GHz fT BiCMOS technology have been fabricated using only one additional mask.
This paper presents a low area, low consumption, 40 GHz low noise amplifier (LNA), a down-converter and an oscillator, from which the performance of a 40 GHz wireless receiver can be estimated. The circuits were realized using a post-processing BCB above-IC technology and 0.13 mum SiGe:C BiCMOS HBT process, and their performance are compared with those obtained on circuits without post-processing...
This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed
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