In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110 GHz for BiCMOS 130 nm technologies characterization. |GammaSMAX| up to 0.75 has been achieved at the DUT input in this frequency range and NFmin of 2.6 dB has been extracted on tested device @ 77 GHz.