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We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. Fabricated in a 0.18 mum CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8 dB over the band, while consuming only 9.4 mW
The measured noise impedance of MOSFETs is found to be invariant across technology nodes. Together with the invariance of the optimum noise figure current density, JOPT, this allows for optimally noise matched LNAs to be ported without redesign between technology nodes and for a given design to be scaled in frequency. The design porting and frequency scaling are validated experimentally on record...
This paper presents circuits in SiGe bipolar technology for automotive radar applications at 77 GHz. They cover the transmit and receive path of typical radar sensors and include a voltage-controlled oscillator with integrated power amplifier and frequency divider, an active mixer and a low-noise amplifier
The impact of collector region design on the high-frequency large-signal power performance of common-emitter (CE) SiGe power HBTs is investigated. Load-pull measurements show that the large-signal power performance of low-breakdown-voltage devices is higher than that of the high-breakdown-voltage device under both class-A and class-AB operation modes. The study indicates that low-breakdown-voltage...
This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed
Large-signal dynamic loadlines of common-emitter (CE) and common-base (CB) SiGe power HBTs are measured and compared to reveal the different amplification mechanisms under the two configurations. Under equivalent junction voltage bias conditions for the two configurations, CB HBT can provide higher power gain and high power-added efficiency (PAE) than CE HBT at low input power. However, CE HBT can...
The tradeoff between common-emitter (CE) and common-base (CB) SiGe HBTs for power amplification in terms of frequency-dependent linearity and power-gain characteristics is investigated. When both CE the CB HBTs are impedance-matched for maximum output power (Pout), the CB configuration exhibits higher power gain, however, with higher third-order intermodulation distortion (IMD3) than that of the CE...
A new RF model for an AMOS varactor is presented for 0.18mum CMOS. This model is the first reported for frequencies above 20 GHz in a standard CMOS technology. It does not rely on boundary conditions for different modes of operation and all component values in the model are calculated using clearly defined physical equations, making it easily adaptable to any varactor layout or even other CMOS technology...
Through-wafer interconnects can be used to alleviate interconnect scaling issues, ground inductance in Si RFICs, MEMS packaging, and SiP applications. The authors developed a through-substrate interconnect technology with resistance les10, record-low inductance, and sidewall capacitance that approaches theoretical values. Constructing a Faraday cage using through-substrate vias substantially reduced...
A CMOS VCO circuit technique which enables a dynamic GHz-band switching has been described. To get wide band switching, it has been clarified analytically that keeping Q constant is important to configure the circuit. To meet this, an LC VCO circuit which can switch resonant capacitors and inductors simultaneously for switching the band has been suggested. To verify the effect, a dual band VCO circuit...
The main failure mode of electrostatic actuated RF MEMS, the stiction of the bridge due to dielectric charging, is investigated using an appropriate methodology based on the MEMS microwave performances measurement for the failure detection and on the threshold voltages evolution monitoring for the failure analysis. The authors present an advanced investigation of this failure mode, the "dynamic...
A fully integrated common source distributed amplifier (CSDA) with ESD protection, designed and fabricated in 130 nm SOI CMOS technology, is presented. This CSDA requires a chip area of 0.75 mm2 . A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4 V supply voltage with a measured power consumption of 66 mW. Low capacitance diode is used for electrostatic discharge (ESD) protection...
A 30 GHz-range power amplifier (PA) IC for short-range point-to-point applications is presented in this paper. The monolithic PA design is fully differential and is fabricated in SiGe HBT technology for low-cost applications. Matching networks are based on distributed elements implemented in coplanar waveguide (CPW) structures. The PA is classed for high linearity and measured output power achieved...
This work examines the differences between the gd0 and gm referenced drain current excess noise factors in CMOS transistors as a function of channel length and bias. Using standard linear noisy two-port theory, we present a simple derivation of noise parameters. The results are compared with the well known Fukui's empirical FET noise equations. Experimental data on a 0.18 mum CMOS process are measured...
Schottky-barrier source/drain (S/D) MOSFETs (SB-MOS) have recently demonstrated leading edge high frequency (HF) performance, featuring a 280 GHz current gain cut-off frequency fT at 30 nm of gate length. Although this figure represents the best ever recorded fT for a p-MOSFET, little effort has been produced, so far, to analyze key small signal elements (SSE) such as the transconductance G m and...
In this paper, we present a cost effective parallel-branch spiral inductor with enhanced quality factor and resonance frequency. This structure is designed to improve the quality factor, but different from other fully stacked spiral inductors. The parallel-branch effect is increased by overlapping the first metal below the second metal with same direction. Measurement result shows an increased quality...
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