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This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz fMAX. The technological optimization strategy is discussed and electrical characteristics are presented. A record peak fMAX of 423 GHz (fT = 273 GHz) is demonstrated in SiGe:C HBT technology.
The following topics are dealt with: SiGe HBT; software defined radio; RF building blocks; device physics; state-of-the-art measurement; parameter extraction; advanced modeling; signal processing; SiGe BiCMOS platform; and SiC power devices.
An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
The European project DOTFIVE addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe BiCMOS towards 500 GHz Fmax and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be...
The RF safe-operating-area of a variety of both bulk and thick-film SOI SiGe HBTs SiGe has been investigated using DC and pulsed-mode output characteristics, as well as RF gain and linearity measurements. SOI SiGe HBTs are found to suffer more from self-heating than bulk devices under DC operating conditions, as expected, due to their naturally higher thermal resistance. However, in terms of RF performance,...
Design guidelines are established for improving the electrothermal stability of multifinger bipolar transistors as a result of experiments and simulations conducted on three-finger silicon-on-glass BJTs with selfheating and mutual thermal resistances varying over a large range of values, depending on silicon area, presence of heatspreaders, isolation and distance between the fingers. A rotational-symmetric...
A two-dimensional theoretical analysis of bipolar transistor operation under reversal base current conditions is presented. This model describes the current crowding effect occurring when the device is biased above the open-base breakdown voltage BVCEO, also known as the ldquopinch-inrdquo effect. In addition, the model clarifies, for the first time, the physical origin of instability phenomena occurring...
The RF linearity characteristics of complementary (npn + pnp) SiGe HBTs are investigated with respect to bias and frequency dependence, for the first time. The differences in distortion performance between npn and pnp SiGe HBTs are examined. Overall, at low bias currents (e.g., for minimum RF noise), both devices exhibit similar linearity performance and power gain, while for higher bias currents...
Development of reconfigurable RF resembles the Quest for the Holy Grail. It was started a long time ago; interesting developments have been achieved but it looks like it will never finish. However, as more and more microelectronic markets are under intense pressure, the need for reconfigurable RF systems is constantly growing. This paper aims at describing all current evolutions which push towards...
We present an integrated frequency synthesizer which is able to provide in-phase / quadrature phase signal over the frequency bands 0.6-4.6 GHz, 5-7 GHz, 10-14 GHz, and in-phase signal over 20-28 GHz for software-defined radio applications. Fabricated in a 0.25 mum SiGe-BiCMOS process, the synthesizer draws 45 mA from a 5 V supply and 160 mA from a 3 V supply. An integrated voltage controlled oscillator...
We present an ultra-low-power SiGe BiCMOS receiver front-end for X-band phased-array radar systems. The receiver, which consists of two LNAs and a 3-bit phase shifter, consumes only 4 mW of DC power while achieving over 10 dB of gain, less than 5 dB noise figure, and an OTOI of over 10 dBm. In addition, the RMS gain and phase errors were less than 0.5 dB and 2deg, respectively. This design demonstrates...
This paper presents a fully integrated 60 GHz single stage power amplifier with cascode topology. The PA is designed on 0.25 mum SiGe:C BiCMOS technology. The technology provides ft and fmax ap 200 GHz. The PA has achieved the 1 dB gain bandwidth of more than 9 GHz from 57 GHz to 66 GHz and 3 dB gain bandwidth of more than 18 GHz (30 %) from 51 GHz to 69 GHz. The PA has been designed to have the wideband...
A new differential LNA dedicated to 60 GHz band has been implemented in a 130 nm BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on the circuit implementation which is a critical design step in mm-Waves range, this work proposes a systematic modeling of layout parasitic elements leading to almost perfectly fit measurement and simulation results. The two stage cascode...
We present a wideband, very low power, Low Noise Amplifier (LNA) implemented in Silicon-Germanium heterojunction bipolar transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 5-11 GHz, and achieves a peak gain of 19.2 dB and 66% fractional bandwidth. The LNA exhibits a Noise Figure (NF) of 1.8-2.6 dB across band and consumes only 9 mW of power. To the authors'...
A low-power transmitter mixer and a receiver mixer operating in the K-band frequency region have been developed. Both mixers can be operated at a low supply voltage of 1.5 V because of a pseudo-stacked configuration using an on-chip transformer. For the transmitter mixer, an emitter degeneration resistor in parallel with a capacitor is introduced to obtain both high linearity and high-gain. Moreover,...
This paper presents an 8.7-13.8 GHz transformer-coupled varactor-less quadrature current-controlled oscillator (QCCO) RFIC. It incorporates a transformer-coupled technique and tuned by varying the operation current through the primary and secondary windings. Fabricated in a 0.13 mum SiGe BiCMOS process, the prototype QCCO achieves a 45.3% wide tuning range. With two stacked octagonal transformers...
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