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In this paper, we present a study on protective coating techniques for thin film X-TEM sample preparation. The study shows that proper choice of the protective layer before FIB cross section is a crucial step to maintain the film profile and make sure the accuracy of the thickness measurement. Silicon native oxide is used as the target sample. We have investigated PECS metal sputtering followed by...
A previous study on long term reproducibility [1] demonstrated that CAMECA Wf can delivered the relative standard deviation (RSD) of the relative sensitivity factors (RSF) of boron (B) are typically 3.7%. Above results show that deviation can be estimated without testing the standards. This paper will demonstrate that the SIMS RSD depend significantly on the species concentration.
A surface layer formation by Cs+ bombardment was observed during ultra-thin oxynitride gate dielectrics depth profiling. A significant thickness change relative to ultra-thin layer of oxynitride was noticed when testing a bombarded sample after a period of time. Cs, O and N depth profiles were examined by Dynamic Secondary Ion Mass Spectrometry (DSIMS). The bombarded sample and new sample were investigated...
In this study, a comparison of the interfacial adhesion strength of Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiN)/Cu and High-Density Plasma Chemical Vapor Deposition (HDP CVD) SiN/Cu was performed using the 4-Point-Bending (4PB) technique. Differences in critical energy release rate value Gc, which is an indicator of the interfacial adhesion strength, were observed. The...
Thin film deposition process invariably introduces compressive or tensile stress in the films. The stress in a film causes the wafer to warp whose curvature is estimated in a wafer fab using optical reflectance technique. Alternatively, the wafer curvature can also be measured using the high resolution XRD (HRXRD) Si(004) rocking curves. In this paper, the HRXRD technique was employed to evaluate...
In this paper, we present three cases studies with dedicated FIB-TEM technique that developed to characterize each of them. The first case describes a FIB sample preparation method that can include two columns of the structure of interest into one sample. It is a useful technique to characterize the overlay offset when more than one column of the structures is concerned. The second case is about to...
Phosphorus is typically a common dopant used in wafer manufacturing. Measuring of phosphorous in Si-wafer is always demanding and matrix interferences is always a problem in VPD ICPMS. It is reported here the measuring of phosphorus in VPD matrix using ICPMS.
Copper diffusion in two types of barrier layers (SiNx and SiCNx) in different conditions was investigated. The Cu depth profiles were examined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Different distributions of Cu in barrier layer were observed. This study aims to understand the mechanism behind in order to select an appropriate barrier material for various applications.
In this paper, we discussed the challenges of chemical analysis using TEM energy-dispersive X-ray spectroscopy (EDS) and electron-energy loss spectroscopy (EELS) for semiconductor devices. In the first case study, we showed that EDS peak overlapping and Bremsstrahlung background may cause false “signals” during defect element analysis. The problem can be solved using the EDS full quantification analysis...
Bond pad sidewall polymer removal in a thick passivation device was attempted using different approaches, longer NE111 clean, 250°C bake and high temperature (HT) NE111 clean. SLAT methodology was adopted to evaluate the Al bond pad quality due to F-content on the bond pad surfaces during long term wafer storage. Both for 250°C bake and HT-NE111 no Fluorine-crystal defects were observed on bond pad...
This paper showed that 75As was a better analyte species than 28Si75As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of 75As showed 1 order higher than 28Si 75As in silicon dioxide matrix. The average RSF for 75As in silicon dioxide was determined to be 5.62E20 and lower variation of 75As RSF was...
This paper elucidates the importance of ion-yield enhancement through primary-ion bombardment in ultra-high surface sensitive Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements of Aluminum bond pad fluorine contamination. A good correlation is achieved, R2 of 0.97, with Auger Electron Spectroscopy (AES) that is commonly used for bond pad surface contamination quantification.
In this work we reported ET (electrical testing) failure case studies related to the process drift of barrier metal deposition (BM) during W via/CA process loops. We presented detailed TEM failure analysis in order to understand the failure mechanism and root cause behind the high via/CA resistance. We demonstrated the importance of TEM characterization and identification of key physical failure signatures...
A case study on isotope antimony for buried implant is presented in this paper. The electrical test was found to correlate to the total dopant dose instead of each isotope present at the wafer. Thus the SIMS qualification has to use sum of both isotopes 121Sb and 123Sb for dopant matching.
Matrix interferences remain one of the biggest problems for wafer VPD-ICPMS analysis. It is reported here that a few metals such as Ti, Ni, Ga and Ge have been successfully resolved from thick SiO2 matrix interference by a new evaporation method.
In this work we reported a case study onET(electrical testing) failure with via high resistance issue. In order to understand the failure mechanism and rootcause behind the high via resistance, detailed TEM(transmission electron microscope) analysis wasperformed by using various TEM FA (failure analysis)techniques, including EDX, EELS analysis. It was foundout that high via resistance arose from the...
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