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A surface layer formation by Cs+ bombardment was observed during ultra-thin oxynitride gate dielectrics depth profiling. A significant thickness change relative to ultra-thin layer of oxynitride was noticed when testing a bombarded sample after a period of time. Cs, O and N depth profiles were examined by Dynamic Secondary Ion Mass Spectrometry (DSIMS). The bombarded sample and new sample were investigated...
Anti-stiction coatings are frequently deposited onto MEMS surfaces to prevent moving structures from getting stuck. Therefore, in order to resolve stiction issues during MEMS production, it is important to characterize the anti-stiction coating effectively. Time-of-Flight SIMS was found to be very useful to this purpose, where the C2F4 signal from the perfluoro-decyltrichlorosilane (FDTS) anti-stiction...
Copper diffusion in two types of barrier layers (SiNx and SiCNx) in different conditions was investigated. The Cu depth profiles were examined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Different distributions of Cu in barrier layer were observed. This study aims to understand the mechanism behind in order to select an appropriate barrier material for various applications.
This paper showed that 75As was a better analyte species than 28Si75As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of 75As showed 1 order higher than 28Si 75As in silicon dioxide matrix. The average RSF for 75As in silicon dioxide was determined to be 5.62E20 and lower variation of 75As RSF was...
This paper elucidates the importance of ion-yield enhancement through primary-ion bombardment in ultra-high surface sensitive Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements of Aluminum bond pad fluorine contamination. A good correlation is achieved, R2 of 0.97, with Auger Electron Spectroscopy (AES) that is commonly used for bond pad surface contamination quantification.
We report the demonstration of a new contact resistance reduction technology for Si:C S/D using Tellurium (Te) implant and segregation. When integrated in a novel process flow featuring a single-metal platinum-based silicide (PtSi) contact technology, independent control of SBH in n- and p-FinFETs can be achieved. A low electron SBH of 120 meV is attained for n-FinFETs with Si:C S/D using PtSi and...
High-resistance via explosion is a new damage phenomenon which is induced during TEM sample preparation using FIB. Two methods that will prevent this phenomenon are introduced. In practice, these methods have been effective in avoiding high-resistance via explosion.
We report the first demonstration of a contact technology employing a combination of low energy Aluminum (Al) ion implantation and pulsed laser anneal (PLA) to form nickel silicide (NiSi) with low hole effective Schottky barrier height (ΦBp) on Si. First, the Al implant energy is reduced over prior work to ensure compatibility with thinner NiSi contacts. Second, the effect of PLA on silicide contact...
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