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A new proprietary Monte-Carlo simulation code dedicated to the heavy-ion cross-section prediction has been developed. The code is based on diffusion-collection equations taking into account recombination processes, considering an improved drain strike model, and new upset analysis algorithms for different circuit architectures. Simulated cross-sections are compared to heavy ion experimental characterizations...
<para> We developed an original physics-based unified analytical model describing the transport from diffusive to ballistic regimes in double-gate MOSFETs. This model includes a new analytical model of the backscattering coefficient based on an accurate empirical approach. In addition, short-channel effects, carrier quantum–mechanical confinement, and degeneracy are considered. For the first...
The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.
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