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The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). A scalable analytical model that can describe the radiation response of MuGFET devices as a function of W is presented here. A set of extracted parameters are used in conjunction with the closed-form expressions for the surface potential, thereby...
This work investigates the effects of high-energy neutrons and γ-rays on Multiple-Gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by γ-rays and high-energy neutrons...
The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without Selective Epitaxial Growth (SEG) and 45° rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs...
The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 μm SOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation...
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