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We have investigated the variation of the optical absorption induced by pulsed (dose rate ≫ 108 rad/s) and continuous (≪ 50 rad/s) γ-ray exposures in pure-silica-core optical fibers. Tested multimode waveguides, designed with well-defined concentrations of hydroxyl groups and chlorine impurity, are possible candidates for integration in the plasma diagnostics of LMJ and ITER facilities. We evaluated...
We investigated the influence of core material, cladding thickness, drawing speed, and coating material on the radiation sensitivity of pure silica core step-index fibers with high OH-content. The gamma radiation-induced attenuation at 660 nm and 850 nm of fibers by different manufacturers are compared.
CCD imagers have been irradiated with 10 to 100 MeV protons, 45 MeV neutrons and measurements focussed on random telegraph signal (RTS) characterization. The objective is to propose a method for RTS detection and to analyse pixels behaviour with temperature, particle species and energy.
The effect of total dose on SEU hardness is investigated as a function of temperature and power supply voltage to determine worst case hardness assurance test conditions for space environments. SRAMs from six different vendors were characterized for single-event upset (SEU) hardness at proton energies from 20 to 500 MeV and at temperatures of 25 and 80degC after total dose irradiating the SRAMs with...
This paper discusses mechanisms and circuit-related factors that affect the degradation of linear integrated circuits from radiation in space. For some circuits there is sufficient degradation to affect performance at total dose levels below 4 krad(Si) because the circuit design techniques require higher gain for the pnp transistors that are the most sensitive to radiation. Qualification methods are...
Accelerator Single Event Effect (SEE) testing is often carried out using beams calibrated and monitored by the facility provider. Occasionally these beam data have been incorrect due to unknown detector degradations, faulty detectors, set-up changes, misalignments or contaminated beams. The facility user (experimenter) has no means of checking suspicious beams and often discovers data discrepancies...
This paper deals with SEE rate prediction and proposes a semi-empirical approach that makes no use of the RPP concept. The investigation is based on a reduced set of ground data and SEU/MBU results are compared with inflight data obtained on memories on-board ICARE (SAC-C orbit). Lastly, 2D mixed-mode simulations complete this study and provide first insight to understand the observed behaviour.
As devices scale to smaller dimensions, the probability of events other than direct ionization by the primary ion having an impact on circuit response increases, especially with high-Z materials located proximal to sensitive regions. In this work, nuclear reactions are integrated into the modeling of the SEU response of an SRAM cell using GEANT4-based simulations. The simulated transient response...
Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mus. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically.
We are showing for the first time the charge loss due to heavy ion irradiation on Hash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell. The resulting threshold voltage shift DeltaVTH grows with ion LET and with applied...
This paper describes application of the pulsed laser approach for identifying latch-up sensitive regions in CMOS circuitry. The utility of this approach for preliminary latchup screening of both COTS and space-qualified parts for applications in radiation environments is described. An application of hardening-by-design principles in which a space qualified CMOS product is modified, based on the pulsed...
A new experimental technique is used to analyze the transient response of partially depleted SOI devices to pulsed laser irradiation. This new technique allows calibration of the deposited charge in the sensitive volume (i.e. the body region of the measured SOI transistors) and then the quantitative analysis of the device transient response. In particular 50-nm gate length SOI transistors have been...
Fault injection in VHDL descriptions has become an efficient solution to analyze at an early stage of the design the potential faulty behaviors of a complex digital circuit. Classical injection campaigns are based on the "single bit-flip" fault model, representative of single event upsets (SEUs). Single event transients (SETs) are becoming more important with very deep sub-micron technologies...
Evidence is presented that solar particle events are a self-organized critical phenomenon. Using daily and monthly fluences of solar protons measured by the IMP-8 and GOES satellite instrumentation over a 28-year period, long-term correlation of events, fractal characteristics and power function behavior for the density functions of fluence magnitudes and waiting times are demonstrated. The implications...
In 2003, a model for the geostationary electron environment: POLE (particle ONERA-LANL environment) has been developed at ONERA/DESP. This model, based on the full range of Los Alamos National Laboratory geostationary satellites, covering the period 1976-2001, is valid from 30 KeV up to 2.5 MeV and takes into account the solar cycle variation. Over the period 1976 to present, three different detectors...
The QinetiQ atmospheric radiation model (QARM) is a comprehensive model of the energetic radiation in the atmosphere. In this paper we report on the improvement and validation activities for this model. The improvements include the implementation of two additional cosmic ray models, new response matrix, dose rate and flight dose calculation facilities. Tests/validations of the model have been carried...
We report on experimental SEU studies using thermal and high-energy neutrons, conducted at the TRIUMF facility, Vancouver. Different SRAM samples were used and many samples showed to be highly susceptible to thermal neutrons. Moreover, a considerable part of the total SEU-rate, at high altitudes as well as down at sea level, may be attributed to thermal neutrons for RAM based devices.
This paper presents a new way of investigation using the laser method. It is based on laser threshold mappings of electronic devices. The main idea is to use these mappings in order to extract physical parameters, for instance sizes and shapes of the different sensitive areas of a component. These parameters can be used as input parameters for analytical or Monte Carlo calculation codes in order to...
Based on Monte-Carlo simulations, a previously presented 3D methodology to quantify MBU occurrences in neutronic environment is adapted to an alpha environment. Experimental and simulated results are compared for a 130 nm commercial SRAM.
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