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Experimental Linear Energy Transfer values of heavy ions in silicon are presented with comparison to estimations from different semi empirical codes widely used among the community. This paper completes the LET data for the RADEF cocktail ions in silicon.
We report real-time SER characterization of CMOS 65nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130nm technology.
On the SPOT5 satellite, in-flight degradation of the SED16 star tracker CCD is presented and compared to the predictions of existing models. Dark current distribution and charge transfer inefficiency at end of mission are found to be within expectations.
This paper presents a novel approach to verify the correct implementation of Triple Modular Redundancy (TMR) for the memory elements of a given netlist using formal analysis. The purpose is detecting any issues that might incur during the use of automatic tools for TMR insertion, optimization, place and route, etc. Our analysis does not require a testbench and can perform full, exhaustive coverage...
This work intends to help designers assess and mitigate radiation effects in systems that use SRAM-based FPGAs. Several methodologies combining experimental procedure, mitigation strategies and technical aspects are discussed.
We compare the behavior of transient pulse propagation from laser testing presented in with electrical simulations, and present an analytical model that considers SET broadening and degradation in integrated circuits.
Investigations using Monte Carlo calculations were performed on the possibilities to design a Bonner spheres neutron spectrometer adapted in particular to natural radiation environment in order to extend its efficiency to high energy domain.
The influence of proton induced cluster defects on reverse current in n-type silicon diodes combined with annealing studies acquiring the properties of bistable cluster related defects measured by DLTS and TSC.
The 8th European Workshop on Radiation and its Effects on Components and Systems, RADECS 2008, was held September 10–12, 2008 at the University of Jyväskylä, Finland. The venue took place at the University's Agora Building locating close to the Alba hotel, where most of the attendees were accommodated. The host of the event was the Department of Physics and its Industrial Applications group served...
Radiation tolerance of small-sized CsI(Tl) crystals coupled to silicon photodiodes was studied by using protons. Irradiations up to the fluence of 1012 protons/cm2 were used. Degradation of light output by less than 5% was achieved.
A Single-Event Upset study has been carried out on PIN photodiodes from a range of manufacturers. A total of 22 devices of eleven types from six vendors were exposed to a beam of 63 MeV protons. The angle of incidence of the proton beam was varied between normal and grazing incidence for three data-rates (1.5, 2.0 and 2.5 Gb/s). We report on the cross-sections measured as well as on the detailed statistics...
This work presents the determination of a Pulsed Laser SEU Cross-Section (Count Statistics). In this work, a coincidence detector has been used to count fault events by comparing the digital VLSI circuit under test with a replica of the design running on a control FPGA. A SEU is declared when a specific fault pattern is detected. The target chip design generates specific fault patterns under pulsed...
We performed neutron and alpha-particle irradiation to reproduce the effects of the terrestrial environment on several commercial SRAMs manufactured by different vendors. We observed that, depending on the tested vendor, the number of errors either increases or slightly decreases for rising temperature, even in devices belonging to the same technology node. SPICE simulations were then used to investigate...
In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.
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