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Thermo-compression bonding (TCB) is an important electronic packaging process which applies heat and pressure to form arrayed interconnections in simultaneity. TCB processes need to be optimized to ensure low thermal variation in order to produce uniform and reliable bonds. Due to the form factors and complex structures involved in TCB, it is difficult to determine thermal variations during bonding...
Vertical stacking semiconductor devices can effectively integrate more functionality in the same footprint. Memory devices are often stacked in 8 and 16 die, and prototypes for up to 64 die have had proven concepts. For many of these devices, wire bonding on unsupported die edge in overhang configurations is required. Controlling the impact force, bonding parameters and lift off force profile are...
The growth of semiconductor industry is driven by more functionality, lower cost and smaller packages. With the proliferation of Cu wire bonding, wire bonding remains the lowest cost interconnect solution for most applications. The higher mechanical strength of Cu wire enables higher loop profiles and longer wire spans which in turn enable high density devices (>2000 I/Os) to be wire bonded. Programming...
Three types of interfacial nanostructure are identified in as-bonded Cu–Al bonds: (1) Cu/~5nm amorphous alumina layer/Al; (2) Cu/~20nm CuAl2 intermetallic particle/Al; and (3) Cu/Al. During annealing, in the areas of latter two types where alumina layer is fragmented, Cu9Al4 and CuAl form as second and third intermetallic layers, and grow vertically and fast together with initial CuAl2. In the area...
Providing more functionality at a lower cost is the driving force in the semiconductor industry. Among the different interconnect technologies such as wire bonding, flip chip and TAB bonding, wire bonding is almost always the lowest cost and the most flexible interconnect solution, therefore, it remains the most popular interconnect method. In this paper, we review several key advances in wire bonding...
With the introduction and proliferation of Cu wire bonding, the cost of wire bonding packages is greatly reduced compared to traditional Au wire bonding. Wire bonding is still the most popular interconnect technology and the work horse of the industry. Technology development and innovation in wire bonding has provided new packaging solutions that improve performance and reduce the cost. This paper...
Quad Flat No-Lead (QFN) is one of the fastest growing semiconductor packages. It offers a variety of advantages including near-chip scale footprint, reduced lead inductance, thin profile and low weight. It also provides good thermal and electrical performance. Wire bonding is an ideal choice to connect integrated circuits (IC) and leadframes in QFN devices, due to its low cost, flexibility and reliability...
With competitive price and superior electrical/thermal conductivity and mechanical properties, more and more IC package industries have adopted copper (Cu) and palladium coated copper (PdCu) wires as the alternative to gold (Au) wire in the past decade. However, the high hardness and the excessive ultrasonic energy and bonding motions required during bonding of Cu wire limit its usage in areas such...
Cu wire bonding has taken over Au wire bonding due to its cost savings and other performance advantages such as higher mechanical strength for complex looping and better electrical performance. Currently, Cu wire bonding of 28nm node devices has been realized in high volume production [1]. To meet the challenges of device reliability for these advanced node devices, we need to understand how to achieve...
With the transition from Au wire bonding to Cu wire bonding, both bare Cu wire and Pd coated Cu (PCC) wire are now commonly used. Humidity reliability is particularly challenging for Cu wire bonding. In this paper, 18 um (0.7 mil) bare Cu and PCC wire are used in the wire bonding and HAST reliability test. Various factors can influence the HAST reliability outcome. The key factors examined in this...
This paper describes the behavior of palladium in palladium-coated Cu (PdCu) wire bonding and its impact on bond reliability by utilizing transmission electron microscopy (TEM). A Pd layer approximately 80nm thick, which is coated on the surface of Cu wire, dissolves into the Cu matrix during ball formation (under N 2 gas protection) when the wire tip is melted to form a ball. As a result...
Wire bonding using bare Cu wire and Pd coated Cu (PdCu) wire has been adopted rapidly as a mainstream packaging technology as an alternative to Au wire bonding. The interfacial characteristics of both Au and Cu wire bonds are well understood as a result of extensive research. However, the interfacial feature and its evaluation in connection with Pd coated Cu wire bonds have not been investigated in...
Due to the increasing cost of Au, the semiconductor industry has gone through a dramatic shift away from Au wire bonding to Cu wire bonding. Pd-coated Cu (PdCu) wire has become the favored wire choice over bare Cu wire for fine pitch applications. The advantages of PdCu wire include better HAST reliability results and a more stable stitch bond process window. This paper will examine the critical aspect...
In the last few years copper wire bonding has undergone a tremendous growth period. The driver behind this growth is the huge cost advantages over gold wire bonding. To achieve this, wire bonding assembly factories have invested heavily in R&D. Much of the development activity has targeted high pin count (300 –1200 I/O), finer pitch and high performance applications. Cu wire bonding has now been...
Wire bonding with bare Cu and Pd coated Cu (PdCu) wire have been adopted quickly as a mainstream packaging technology for high pin count and fine pitch devices. The differences between Au and Cu wire bonding are well understood as a result of extensive research. However, the differences between Cu and PdCu wire have not been investigated in as much detail. This paper is a result of collaborative work...
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