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As transistor technologies continue to scale and device density increases, junction formation requirements are subject to increasing challenges. Ion implantation is the preferred approach for junction formation due to its precise control of dopant depth and dose. These aspects are crucial to deliver finely tuned transistor performance and limit device variation. Arsenic and phosphorus (n-type) dopants...
SiF4 PLAD has been systematically characterized and optimized. The correlations between the etching, deposition, retained F dose and profile as functions of the PLAD process variables including implant voltage, RF power, pressure, pulse duty cycle, and the diluting gases have been extensively investigated. It was found that PLAD process by using pure SiF4 is in an etching or RIE regime, but can be...
In this paper, we demonstrate that high voltage NMOS is very sensitive to LDD implant process conditions. With the same implant energy and dose, high voltage NMOS channel punch through BVDSS tail is strongly toggled by critical implant process parameters such as beam current and beam size. Lower beam current density reduces both implant damage and beam angular divergence. As a result, LDD lateral...
Carrier mobilities (μ) versus Si channel directions have been studied for boron-, arsenic-, and phosphorus-implanted highly-doped Si (100) which is equivalent to a source and drain (SD) region of MOSFET by using a continuous anodic oxidation technique/differential Hall effect (CAOT/DHE) technique. The results for B-doped Si show that the hole drift mobility along the Si <100> channel direction...
An ultra-low energy high dose B-based implant was processed after source and drain region formed and before metal sillicide contact formed for PMOS devices. B beam-line (BL) implant and plasma doping (PLAD) using either B2H6 or BF3 gases were utilized for this process. PMOS device performance showed significant improvements, including ∼70 percent lower contact resistances, similar threshold and sub-threshold...
PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, we present developments of PLAD on both planar and 3D device structures. Comparing with the conventional BL implants, PLAD shows not only a significant production enhancement,...
Electron holography, as a powerful method for two-dimensional (2D) doping profiling, is used to study 2D cross-sectional doping profiles of low energy high dose ion implantations including conventional beam-line 11B implant and B2H6 plasma doping (PLAD). It has been found that B2H6 PLAD with -6 kV voltage and 2 × 1016/cm2 dose shows slightly deeper junction depth xj, both of the vertical xj(V), and...
The focus of this paper is a comparative study of the advanced boron-based ultra-low energy (ULE) doping techniques on ultra-shallow junction (USJ) fabrications, including beam-line atomic 11B implant, BF2, B18H22, C2B10H12 molecular implants, cluster B implant, and B2H6 and BF3 PLAD implants. It has been found that B2H6 PLAD and B18H22 molecular implants demonstrate the best RS-xj and abruptness...
New carrier mobility (??) data for boron-, phosphorus-, and arsenic-doped Si in a low-energy, high-dose implant regime are measured and studied using continuous anodic oxidation technique/differential Hall effect (CAOT/DHE) technique. The data show that when the doping concentration is > 1020/cm3, both hole and electron mobility values are lower than the conventional model predictions, and the...
We report a new approach to utilize oxygen implantation on the top of the floating gate (FG) to improve the cell performance of a sub-50 nm NAND flash memory cell. This method was used to form a thin oxide layer only on the top of the FG but not on the sidewalls. It also rounded the corners of the FG. As a result, the leakage current between FG and control gate (CG) was reduced without sacrificing...
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