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An InP-based fiber-coupling structure in which additional waveguide is overlaid on deep-ridge main waveguide is proposed with design and fabrication results. It is a feature of the structure that both the overlying and main waveguides participate in the fiber coupling.
Waveguide photodetector array was developed to be applicable to advanced modulation formats like QPSK, DPSK, and 16-QAM. The devices have spot-size converter for butt-coupling with PLC devices, and on-chip by-pass capacitor for DC bias. Coherent receiver made of the fabricated chips showed clear constellation for 30 Gbaud DP-QPSK OFDM signal.
Skew of balanced receiver was measured using O/E response measurement setup and optical splitter. Using the function of balanced receiver, its skew is obtained precisely from the oscillation period of O/E response.
We present a hybrid-integrated coherent receiver module using flip-chip technology for coupling a silica-based 90o-hybird planar lightwave circuit (PLC) chip to a spot-size converter integrated waveguide photodiode (SSC-WG-PD) array chip for a balanced photodiode (BPD) and interconnecting with a dual-channel transimpedance amplifier (TIA).
We present a hybrid-integrated coherent receiver module using a chip-to-chip bonding technology to integrate a spot-size converter integrated photodiode array chip and an optical hybrid chip using a silica-based PLC technology.
A flexible long range-SPP optical interconnector is developed for the data lines in mobile devices providing high definition video display and recording without seamless. We show the feasibility from polymer material development to system test.
A hybrid-integrated coherent receiver module has been achieved using flip-chip bonding technology, consisting of a silica-based 90°-hybrid planar lightwave circuit (PLC) platform, a spot-size converter integrated waveguide photodiode (SSC-WG-PD), and a dual-channel transimpedance amplifier (TIA). The receiver module shows error-free operation up to 40Gb/s and OSNR sensitivity of 11.5 dB for BER =...
We propose a computationally efficient and frequency-offset-tolerant channel estimation and synchronization method for polarization-division-multiplexed (PDM) coherent optical OFDM (CO-OFDM). Using this method, we demonstrate a 43-Gb/s PDM CO-OFDM transmission with 16-QAM subcarrier modulation over 5,200-km of ultra-large-area fiber.
We developed amplifier-integrated 40 Gbps optical receiver and transmitter module. The packaging technologies for the high-speed optical module are discussed and applied to develop the modules. For the optical receiver, the design and 40 Gbps NRZ eye diagrams are reported. For the optical transmitter, the manufacturability of wedge bonding to suppress the high-frequency resonance was investigated,...
We fabricated 40 Gb/s electroabsorption modulator-integrated DFB lasers (EMLs). Adopting traveling-wave (TW) electrode and tilted facet improved high-frequency characteristics of EMLs. The 3 dB bandwidth of E/O response for TW-EML was as large as 34 GHz, as compared with 27 GHz for lumped EML. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance...
We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through selective-area growth method. The facet reflection was not sufficiently removed by just depositing anti-reflection coating on the as-cleaved facet and low frequency resonance occurred by optical feedback from facet to DFB laser. Tilted facet formed by dry etching processes successfully...
Driver Amplifier Integrated (DAI) 40 Gb/s Electroabsorption Modulator-Integrated DFB Laser (EML) modules were developed. The Selective area growth (SAG) method were first adopted for fabricating 40 Gb/s EML devices and test showed that the measured 3 dB bandwidth of the Electrical-to-Optical (E/O) response reached about 45 GHz, with a return loss (S11) of below 10 dB up to 50 GHz for the devices....
We developed 40 Gb/s traveling wave electroabsorption modulator-integrated DFB laser (TW-EML) modules using several advanced technologies. This 40 Gb/s EML device adopted traveling wave electrode structures and showed the result that the measured 3 dB bandwidth of the electrical-to-optical (E/O) response reached about 45 GHz and the return loss (S11) was kept below -10 dB up to 50 GHz. For the module...
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