The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The most complex photonic ICs today have been developed for WDM applications. An overview of the most important integration technologies will be given and recent developments towards broader applications and higher integration densities will be discussed.
We address recent advances and prospects of nanophotonic devices based on quantum dots toward highly-efficient and highly-secured information technologies. The discussion includes high-performance quantum dot lasers for broadband network and quantum information device such as single photon emitters.
We examine the limits in scaling of InP-based bipolar and field effect transistors for increased device bandwidth. With InP-based HBTs, emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth; devices with 1-1.5 THz simultaneous f? and fmax are feasible. Major challenges faced in developing either InGaAs HEMTs having THz cutoff frequencies...
Northrop Grumman Space Technology (NGST) has developed a MMIC compatible, hermetic wafer-level packaging (WLP) technology that is proven to be hermetic, mechanically and electrically robust. This WLP technology is an enabling technology for realizing lightweight, multifunctional and low cost modules for current and future space and military systems. In this paper, data obtained from various packaged...
We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz, and a maximum oscillation frequency (fmax ) of 358 GHz. The excellent high-speed performance was obtained by using a Pt/Mo/ Ti/Pt/Au buried gate technology, which enabled...
We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP...
A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nm gate length MHEMT and includes a 50 mum substrate backside process with dry etched through-substrate vias. For the electron confinement an ln0.8Ga0.2As/ln0.53Ga0.47As composite channel was used. The devices are passivated with...
We fabricated a 35-nm-gate In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistor by using a simple, self-aligned one-step-recessed gate procedure. An extrinsic maximum transconductance (gm_max) of 1.7 S/mm and a current gain cutoff frequency (fT) of 520 GHz were achieved at room temperature. This significantly high fT was obtained by reducing the gate length to 35 nm and using an epitaxial...
We review our work in the area of large scale InP photonic integrated circuits (PIC). We will review dense wavelength division multiplexed (DWDM) transmitter and receiver PICs with up to 40 channels, and operating at data rates up to 40 Gbit/s.
A room-temperature continuous-wave operation under optical pumping was demonstrated with GalnAsP/InP membrane DFB lasers prepared on an SOI substrate integrated with a rib-waveguide structure. A threshold pump power of 11.3 mW and a sub-mode suppression ratio of 29 dB were obtained with a cavity length of 140 mum and a stripe width of 1.5 mum. Light output was obtained through the SOI waveguide of...
We present a novel concept of free integration of InGaAlAs-based and InGaAsP-based components on a single InP substrate for higher-performance long-wavelength opto-electronic devices. A butt-jointing process with in situ cleaning was used to obtain high-quality integration of InGaAlAs and InGaAsP components. Combinations of InGaAlAs lasers integrated with InGaAsP, and InGaAsP lasers integrated with...
We designed the strain and bandgap distribution of tensile InGaAs/InGaAsP grown by selective-area MOVPE using vapor-phase diffusion model. A design principle of selective-area growth for integrating polarization independent components is discussed.
Monolithic integration of a distributed reflector (DR) laser with a front power monitor has been fabricated, where quantum wire-like active regions have been used as a photo detector for the first time. The electrical isolation between the laser and power monitor sections has been realized by deep (3.8 ?m) and narrow (500nm) groove etching while moderately high optical transmittivity of about 95%...
For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular,...
The authors achieved a minimum noise figure (NFmin) of 1.0 dB at 94 GHz using 110 nm-gate InAlAs/InGaAs HEMTs with a thin Schottky barrier layer. The obtained NFmin is one of the lowest values ever reported for HEMTs. This low-noise property is promising for applications involving millimeter-wave communications and image sensors.
A new InP HEMT process has been developed with 35nm gate length and improved Ohmic contact. A gate-source capacitance of 0.4pF/mm is achieved with the reduced gate length, a 30% improvement over our baseline 70nm device. The contact resistance is successfully reduced to 0.07 with the newly designed contact layer combined with an alloyed Au/Ge/Ni/Au Ohmic metal. Good device characteristics has been...
Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.
InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz,...
A family of ultrafast photodetectors based on evanescently coupled photodiodes, is described. The waveguide-integrated detectors are monolithically integrated with bias-Ts, coplanar transmission lines and MMI-couplers, employing semi-insulating optical waveguides on a semi-insulating InP:Fe substrate. The integration scheme is explained and demonstrated by examples of miniaturized ultra-broadband-,...
We present a monolithic photo-receiver based upon the InP/GalnAs HBT technology for optical communication at 1.55 mum. The photoreceiver consists of a top-illuminated photodiode and a transimpedance traveling wave amplifier. The same layers are used for the diodes and the base collector junction of the transistors. An advanced amplifier design, that achieves high bandwidth-to-fT ratio, expands the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.